Taketomo Sato

H. Hasegawa, F. Ishikawa, Taketomo Sato, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

H. Amano, Taketomo Sato, Y. Honda, 2019, Japanese Journal of Applied Physics.

Effects of chronic administration of pilocarpine on saliva secretion in streptozotocin-induced diabetic mice

Y. Nakagawa, M. Humphreys-Beher, Taketomo Sato, 2001 .

Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process

Seiya Kasai, Hideki Hasegawa, Taketomo Sato, 2001 .

Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures

Hideki Hasegawa, Taketomo Sato, H. Hasegawa, 2005 .

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Hideki Hasegawa, Isao Tamai, Taketomo Sato, 2005 .

Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

H. Hasegawa, Taketomo Sato, I. Tamai, 2004 .

Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

T. Kachi, T. Narita, Taketomo Sato, 2022, Journal of Applied Physics.

Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

Zenji Yatabe, A. Watanabe, Taketomo Sato, 2014 .

Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures

Taketomo Sato, A. Mizohata, 2008 .

Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process

T. Hashizume, Taketomo Sato, T. Fujino, 2007 .

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Taketomo Sato, Y. Kumazaki, S. Matsumoto, 2017 .

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

Zenji Yatabe, A. Watanabe, Taketomo Sato, 2015, Semiconductor Science and Technology.

Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Hideki Hasegawa, Isao Tamai, Taketomo Sato, 2004 .

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

T. Kachi, T. Narita, Taketomo Sato, 2018, Japanese Journal of Applied Physics.

Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions

N. Fukuhara, F. Horikiri, T. Yoshida, 2019, Applied Physics Express.

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Toward ultra-low power III-V quantum large scale integrated circuits for ubiquitous network era

Seiya Kasai, Hideki Hasegawa, Taketomo Sato, 2006 .

Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Hideki Hasegawa, Nanako Shiozaki, Taketomo Sato, 2005 .