M. Toguchi

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

T. Mishima, N. Fukuhara, F. Horikiri, 2019, IEEE Transactions on Semiconductor Manufacturing.

Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures

O. Ichikawa, N. Fukuhara, F. Horikiri, 2020, Applied Physics Express.

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

Taketomo Sato, M. Toguchi, Yuto Komatsu, 2019, IEEE Transactions on Semiconductor Manufacturing.

Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

O. Ichikawa, N. Fukuhara, F. Horikiri, 2021, Journal of Applied Physics.

Thermal-assisted contactless photoelectrochemical etching for GaN

T. Mishima, N. Fukuhara, F. Horikiri, 2020, Applied Physics Express.

Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source

T. Mishima, N. Fukuhara, F. Horikiri, 2019, Applied Physics Express.

Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques

J. Suda, T. Kachi, Taketomo Sato, 2020, Applied Physics Express.

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

T. Kachi, T. Narita, Taketomo Sato, 2018, Japanese Journal of Applied Physics.

Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions

N. Fukuhara, F. Horikiri, T. Yoshida, 2019, Applied Physics Express.