S. Takashima

发表

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

K. Nakagawa, K. Ueno, M. Shimizu, 2017 .

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

A. Uedono, S. Ishibashi, M. Edo, 2021, Applied Physics Letters.

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

A. Uedono, K. Ueno, S. Chichibu, 2019, Japanese Journal of Applied Physics.

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

A. Uedono, K. Ueno, K. Fujito, 2018 .

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

A. Uedono, K. Ueno, S. Chichibu, 2018 .

Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam

A. Uedono, K. Ueno, H. Naramoto, 2015 .

Electron microscopy studies of the intermediate layers at the SiO2/GaN interface

K. Nakagawa, Y. Irokawa, K. Ueno, 2017 .

Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

K. Nakagawa, K. Ueno, M. Edo, 2019, Applied Physics Express.

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020 .

Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

K. Ueno, M. Edo, S. Takashima, 2019, Japanese Journal of Applied Physics.

Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020, Journal of Electronic Materials.

Dependence of thermal stability of GaN on substrate orientation and off-cut

Y. Kumagai, B. Monemar, M. Edo, 2019, Japanese Journal of Applied Physics.

Synthesis of Melt Grown Y2Ba4Cu7O15-δ Bulk Superconductor Using High Oxygen Pressure Techniques

U. Mizutani, T. Oka, K. Kawamoto, 1994 .

Critical current density and mechanical strength of YBa2Cu3O7-δ superconducting composites containing Zr, Ag and Y2BaCuO5 dispersions by melt-processing

U. Mizutani, T. Oka, Hidehiko Tanaka, 1992 .

Mechanical and Superconducting Properties of Melt-Processed YBCO Composites Containing BaZrO3, Ag and 211-Phase

U. Mizutani, T. Oka, Hidehiko Tanaka, 1993 .

Mechanical and Magnetic Properties of Zr-YBCO Superconducting Composites

U. Mizutani, T. Oka, Hidehiko Tanaka, 1992 .

Microstructure and Superconducting Properties of Low Temperature Melt-Processed YBa2Cu3O7-δ Composites with Fine Y2BaCuO5 and Yb2BaCuO5 Addition

M. Yoshikawa, U. Mizutani, T. Oka, 1994 .

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

T. Chow, Zhongda Li, S. Takashima, 2013, IEEE Transactions on Electron Devices.

Robustness of Non-Fermi-Liquid Behavior near the Ferromagnetic Critical Point in Clean ZrZn2

H. Takagi, M. Nohara, S. Takashima, 2007 .

NMR study of a texture structure in the superconducting order parameter of CeCoIn5

K. Kumagai, M. Nohara, Y. Furukawa, 2007 .

Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates

Ashutosh Kumar, T. Ohkubo, K. Hono, 2019 .

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

M. Boćkowski, T. Sekiguchi, Jun Chen, 2022, Journal of Applied Physics.

High Pressure and Superconductivity: Intercalated Graphite Cac 6 as a Model System

M. Calandra, F. Mauri, H. Takagi, 2010 .

Enhancement of superconductivity and evidence of structural instability in intercalated graphite CaC6 under high pressure.

H. Takagi, A. Gauzzi, N. Emery, 2007, Physical review letters.

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

A. Uedono, K. Ueno, S. Chichibu, 2021, Scientific Reports.

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

A. Uedono, K. Ueno, S. Chichibu, 2018 .

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

K. Ueno, J. Suda, M. Horita, 2016 .

Mg diffusion and activation along threading dislocations in GaN

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020 .

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Ashutosh Kumar, Y. Irokawa, K. Ueno, 2018, Nanoscale Research Letters.

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

A. Uedono, K. Ueno, M. Shimizu, 2017 .

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

T. Sekiguchi, Jun Chen, T. Ohkubo, 2023, Journal of Applied Physics.

Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion

T. Sekiguchi, Jun Chen, W. Yi, 2019, Applied Physics Express.

Normally-off MOSFET Properties Fabricated on Mg Implanted GaN Layers

K. Nakagawa, K. Ueno, M. Edo, 2017 .

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2015 .

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

K. Ueno, K. Shiojima, M. Edo, 2021, Japanese Journal of Applied Physics.

Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN

T. Chow, Zhongda Li, S. Takashima, 2013 .

Quantum criticality and disorder in the antiferromagnetic critical point of NiS$_{2}$ pyrite

Y. Tokura, H. Takagi, H. Nishikubo, 2007, 0704.0591.

Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices

T. Chow, Zhongda Li, S. Takashima, 2012 .