N. Sasaki

发表

Higher harmonic generation in CMOS/SOS ring oscillators

N. Sasaki, N. Sasaki, 1982, IEEE Transactions on Electron Devices.

Three-dimensional CMOS IC's Fabricated by using beam recrystallization

N. Sasaki, S. Kawamura, T. Iwai, 1983, IEEE Electron Device Letters.

Submicron-scale characterization of poly-Si thin films crystallized by excimer laser and continuous-wave laser

Akito Hara, Nobuo Sasaki, Y. Katoh, 2004 .

Use of necked-down areas to control nucleation site and direction of solidification of polycrystalline silicon using excimer laser crystallization

N. Sasaki, A. Hara, 2000 .

The effects of laser annealing ambient and the number of laser shots on the morphology of poly‐si films

N. Sasaki, A. Hara, Y. Mishima, 2003 .

Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator

Y. Uraoka, M. Arif, N. Sasaki, 2020, Crystals.

Power dependence of orientation in low-temperature poly-Si lateral grains crystallized by a continuous-wave laser scan

Y. Uraoka, N. Sasaki, Yoshiaki Nieda, 2017 .

Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, F. Takeuchi, 2004 .

High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, Y. Ebiko, 2004 .

42.4: Characterization of Electrochemically‐Active Defects in Si‐Film Laser‐Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching

N. Sasaki, K. Kitahara, Kenichi Yamamoto, 2009 .

High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Y. Mishima, M. Takei, N. Sasaki, 2001, IEEE Electron Device Letters.

Transition mechanism of the thin Si-films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} oriented crystal to the twinned {211} crystal depending on the laser power

Y. Uraoka, M. Arif, N. Sasaki, 2019, Japanese Journal of Applied Physics.

LP‐1: Late‐News Poster: Scaling Effects of Sub‐Micron Low‐Temperature Poly‐Si TFTs

K. Mishima, N. Sasaki, F. Takeuchi, 1999 .

High-aspect-ratio via-hole filling with aluminum melting by excimer laser irradiation for multilevel interconnection

N. Sasaki, M. Nakano, R. Mukai, 1987, IEEE Electron Device Letters.

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

N. Sasaki, A. Hara, F. Takeuchi, 2003 .

Experimental evidence of grain-boundary related hot-carrier degradation mechanism in low-temperature poly-Si thin-film-transistors

M. Takei, T. Tsuchiya, N. Sasaki, 2003, IEEE International Electron Devices Meeting 2003.

High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate

N. Sasaki, A. Hara, M. Takei, 2002, Digest. International Electron Devices Meeting,.

High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization

N. Sasaki, A. Hara, Y. Mishima, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Low-power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET

N. Sasaki, Y. Takao, H. Shimada, 1992 .

A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure

N. Sasaki, Y. Mishima, K. Ohgata, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation

N. Sasaki, A. Hara, 2000 .

Extension of the {100}-Oriented Grain-Boundary Free Si Thin Film Grown by a Continuous-Wave Laser Lateral Crystallization

Y. Uraoka, Y. Ishikawa, M. Arif, 2020 .

High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Akito Hara, Nobuo Sasaki, Katsuyuki Suga, 2002 .

Effect of silicon film thickness on threshold voltage of SOS-MOSFETs

N. Sasaki, R. Togei, 1979 .

Gettering of iron impurities in p/p+ epitaxial silicon wafers with heavily boron‐doped substrates

N. Sasaki, M. Aoki, T. Itakura, 1995 .

A CMOS/SOS gate array with a new customization technique of cutting

N. Sasaki, M. Nakano, N. Sasaki, 1982, IEEE Transactions on Electron Devices.

Charge pumping in SOS—MOS transistors

N. Sasaki, N. Sasaki, 1981, IEEE Transactions on Electron Devices.

Sheet‐resistance characterization of ion‐implanted silicon resistors at cryogenic temperatures

N. Sasaki, 1987 .

Role of halogen in low-temperature growth of polycrystalline thin films by reactive thermal CVD

J. Hanna, N. Sasaki, C. Lim, 2008 .

Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films

Y. Uraoka, N. Sasaki, S. Takayama, 2023, Crystals.

Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

Y. Uraoka, M. Arif, N. Sasaki, 2021, Journal of Electronic Materials.

Effect of surface tension on crystal growth of Si thin films by a continuous-wave laser lateral crystallization

Y. Uraoka, M. Arif, N. Sasaki, 2019, Applied Physics Express.

57‐3: Folded Pixel Circuit Design in Grain‐Boundary Free (100) Oriented LTPS Stripes Fabricated by Selective CW‐laser Lateral Crystallization

Y. Uraoka, M. Arif, N. Sasaki, 2018 .

Change of Si-SiO2 Interface Charge by BT Treatment

N. Sasaki, 1973 .

Limit of the mobility enhancement of the excimer-laser-crystallized low-temperature poly-Si TFTs

N. Sasaki, N. Sasaki, A. Hara, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

N. Sasaki, K. Yoshikawa, 1992 .

Single crystalline Si islands on an amorphous insulating layer recrystallized by an indirect laser heating technique for three-dimensional integrated circuits

T. Iwai, N. Sasaki, S. Kawamura, 1984 .

9‐1: Fabrication of Lateral Crystal Si on Cu Bottom‐Gate Structure via Blue‐Laser Diode Annealing (BLDA)

N. Sasaki, S. Sugimoto, Y. Yingbao, 2021, SID Symposium Digest of Technical Papers.