H. Peelaers

发表

Phonon band structure of si nanowires: a stability analysis.

F. Peeters, B. Partoens, H. Peelaers, 2009, Nano letters.

Ab initio study of enhanced thermal conductivity in ordered AlGaO3 alloys

Sai Mu, C. D. Walle, H. Peelaers, 2019 .

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

David E. Aspnes, Linyou Cao, Chris G. Van de Walle, 2015, Scientific Reports.

Vibrational properties of graphene fluoride and graphane

F. Peeters, B. Partoens, O. Leenaerts, 2010, 1011.0018.

Intra- and inter-conduction band optical absorption processes in β-Ga2O3

D. Jena, H. Xing, F. Rana, 2020 .

Mid-infrared monocrystalline interference coatings with excess optical loss below 10 ppm

A. Fleisher, D. Follman, C. Deutsch, 2020, 2009.04721.

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Simin Zhang, E. Chowdhury, H. Peelaers, 2022, APL Materials.

Nature and evolution of the band-edge states in MoS 2 : From monolayer to bulk

A. Janotti, C. Walle, H. Peelaers, 2014 .

First-principles study of transport in WO3

C. G. Van de Walle, Wennie Wang, H. Peelaers, 2020 .

First-principles study of van der Waals interactions in MoS2 and MoO3

C. Walle, C. G. Van de Walle, H. Peelaers, 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

M. Albrecht, W. Haensch, A. Seabaugh, 2013, 1310.6824.

First-principles investigation of graphene fluoride and graphane

F. Peeters, B. Partoens, O. Leenaerts, 2010, 1009.3847.

Atomic-scale tuning of ultrathin memristors

Judy Z. Wu, F. R. Robles Hernández, H. Peelaers, 2022, Communications Physics.

Impact of electric-field-dependent dielectric constants on two-dimensional electron gases in complex oxides

A. Janotti, C. Walle, Anna Sarwe, 2015 .

Nanoscale Periodic Trapping Sites for Interlayer Excitons Built by Deformable Molecular Crystal on 2D Crystal.

H Zhao, W. Chan, H. Peelaers, 2022, ACS nano.

Hydrogenated cation vacancies in semiconducting oxides

A. Janotti, C. Walle, C. G. Van de Walle, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Structural and electronic properties of Ga2O3-Al2O3 alloys

J. Speck, C. G. Van de Walle, J. Varley, 2018, Applied Physics Letters.

Impact of point defects on electrochromism in WO3

Chris G. Van de Walle, Anderson Janotti, Wennie Wang, 2018, OPTO.

Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2

Hartwin Peelaers, E. Kioupakis, C. D. Walle, 2012 .

Effect of Titanium Induced Chemical Inhomogeneity on Crystal Structure, Electronic Structure, and Optical Properties of Wide Band Gap Ga2O3

Sreeprasad T. Sreenivasan, C. Ramana, C. G. Van de Walle, 2020 .

Hydrogen-Induced Degradation of NaMnO2

C. G. Van de Walle, H. Peelaers, Zhen Zhu, 2019, Chemistry of Materials.

Orientation-dependent band offsets between (AlxGa1−x)2O3 and Ga2O3

Yong-Hang Zhang, Sai Mu, C. D. Walle, 2020, Applied Physics Letters.

Controlling n-Type Doping in MoO3

C. Walle, M. Chabinyc, H. Peelaers, 2017 .

Fundamental limits on the electron mobility of β-Ga2O3

C. G. Van de Walle, H. Peelaers, Youngho Kang, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

Electronic and protonic conduction in LaFeO3

C. D. Walle, H. Peelaers, Zhen Zhu, 2017 .

First-principles study of electron-phonon interactions and transport in anatase TiO2

C. G. Van de Walle, H. Peelaers, Youngho Kang, 2019, Physical Review B.

Elastic Constants and Pressure-Induced Effects in MoS2

C. D. Walle, H. Peelaers, 2014 .

Ultrafast hole transfer from monolayer ReS2 to thin-film F8ZnPc

Hui Zhao, W. Chan, H. Peelaers, 2021 .

Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires

F. Peeters, B. Partoens, H. Peelaers, 2012 .

Phonons in Ge nanowires

F. Peeters, B. Partoens, H. Peelaers, 2009 .

Properties of B and P doped Ge nanowires

F. Peeters, B. Partoens, H. Peelaers, 2007 .

First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3

Sai Mu, C. D. Walle, H. Peelaers, 2020 .

( In x Ga 1 − x ) 2 O 3 alloys for transparent electronics

A. Janotti, C. Walle, D. Steiauf, 2015 .

First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon

J. Morton, Sai Mu, C. G. Van de Walle, 2020, npj Computational Materials.

Deep acceptors and their diffusion in Ga2O3

J. L. Lyons, C. G. Van de Walle, J. Varley, 2019, APL Materials.

Effects of strain on band structure and effective masses in MoS$_2$

C. D. Walle, H. Peelaers, C. G. Van de Walle, 2012 .

Phonon- and charged-impurity-assisted indirect free-carrier absorption in Ga2O3

C. G. Van de Walle, H. Peelaers, 2019, Physical Review B.

Brillouin zone and band structure of β‐Ga2O3

C. G. Van de Walle, H. Peelaers, 2015 .

Nanoscale Periodic Trapping Sites for Interlayer Excitons Built by Deformable Molecular Crystal on 2D Crystal.

Hui Zhao, H. Peelaers, Pavel Valencia-Acuna, 2023, ACS nano.

Ultrafast dynamics of gallium vacancy charge states in β−Ga2O3

D. Jena, H. Xing, F. Rana, 2021, Physical Review Research.

Doping of Ga 2 O 3 with transition metals

C. D. Walle, H. Peelaers, 2016 .

Limitations of In2O3 as a transparent conducting oxide

E. Kioupakis, C. G. Van de Walle, H. Peelaers, 2019, Applied Physics Letters.

First-Principles Calculations 1

C. Walle, H. Peelaers, Chris G. Van de Walle, 2020 .

Lack of quantum confinement in Ga 2 O 3 nanolayers

C. D. Walle, H. Peelaers, 2017 .

Properties of orthorhombic Ga2O3 alloyed with In2O3 and Al2O3

J. L. Lyons, H. Peelaers, Sierra Seacat, 2021, Applied Physics Letters.

First-principles study of doped Si and Ge nanowires

F. Peeters, B. Partoens, H. Peelaers, 2008 .

First-principles study of direct and indirect optical absorption in BaSnO3

C. D. Walle, H. Peelaers, Youngho Kang, 2018 .

Orthorhombic alloys of Ga 2 O 3 and Al 2 O 3

J. L. Lyons, H. Peelaers, Sierra Seacat, 2020, Applied Physics Letters.

Sub-band-gap absorption in Ga 2 O 3

C. D. Walle, H. Peelaers, 2017 .

Convergence of quasiparticle band structures of Si and Ge nanowires in the GW approximation and the validity of scissor shifts

G. Rignanese, T. Rangel, X. Gonze, 2011 .

Energy-valley-dependent charge transfer in few-layer transition metal dichalcogenide heterostructures

H Zhao, H. Peelaers, Pavel Valencia-Acuna, 2023, Physical Review B.

First-principles investigation of graphene fluoride and graphane

F. Peeters, B. Partoens, O. Leenaerts, 2010, 1009.3847.

Intra- and inter-conduction band optical absorption processes in β-Ga2O3

D. Jena, H. Xing, F. Rana, 2020, Applied Physics Letters.

First-principles study of transport in WO 3

C. Walle, Wennie Wang, H. Peelaers, 2020 .

Mid-infrared interference coatings with excess optical loss below 10 ppm.

A. Fleisher, D. Follman, C. Deutsch, 2021, Optica.

Carrier-induced absorption as a mechanism for electrochromism in tungsten trioxide

C. G. Van de Walle, Wennie Wang, H. Peelaers, 2018 .

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

H. Peelaers, K. Tetzner, S. Bin Anooz, 2024, Advanced Electronic Materials.

Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering in SnO 2

E. Kioupakis, C. D. Walle, H. Peelaers, 2015 .