B. Van Daele

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Gustaaf Borghs, G. Van Tendeloo, Joff Derluyn, 2006 .

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

G. Van Tendeloo, Wouter Ruythooren, Joff Derluyn, 2005 .

Engineering of an insulating buffer and use of aln interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Ingrid Moerman, L. C. Nistor, Eva Monroy, 2003 .

Formation of metallic in in InGaN/GaN multiquantum wells

Ingrid Moerman, G. Van Tendeloo, I. Moerman, 2004 .

Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors

G. Van Tendeloo, Anne Lorenz, Joff Derluyn, 2006 .