R. F. Tsui

Demonstration of a sub-0.03 um2 high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node

Shien-Yang Wu, T. Miyashita, C. H. Tsai, 2016, 2016 IEEE Symposium on VLSI Technology.

A 16nm FinFET CMOS technology for mobile SoC and computing applications

Shien-Yang Wu, S. H. Yang, M. C. Chiang, 2013 .

A 16nm FinFET CMOS technology for mobile SoC and computing applications

H. T. Lin, Shien-Yang Wu, T. Miyashita, 2013, 2013 IEEE International Electron Devices Meeting.

An enhanced 16nm CMOS technology featuring 2nd generation FinFET transistors and advanced Cu/low-k interconnect for low power and high performance applications

R. F. Tsui, Shien-Yang Wu, C. Y. Lin, 2014, 2014 IEEE International Electron Devices Meeting.

A New Phenomenon of Retention Time Evolution in Embedded DRAM Technology with High-K Dielectrics (Ta2O5) MIM Capacitor After HTOL Test

R. F. Tsui, H. W. Chin, J. Shih, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Electrical transport and superconductivity in the Al2O3-Bi2Sr1.8Ca1.2Cu2Oy and MgO-Bi2Sr1.8Ca1.2Cu2Oy composites

R. F. Tsui, Juhn-Jong Lin, W. Lin, 1993 .

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

C.C. Chen, Shien-Yang Wu, S.Y. Chang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).