J.-P. Locquet

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

R. Germann, J. Fompeyrine, S.R. Forrest, 2007, IEEE Electron Device Letters.

Relaxor ferroelectricity and magnetoelectric coupling in ZnO-Co nanocomposite thin films: beyond multiferroic composites.

K. Temst, K. Temst, J. Locquet, 2014, ACS applied materials & interfaces.

Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain

G. Van Tendeloo, J. Fompeyrine, J. Locquet, 1998, Nature.

Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

A. Scholl, J. Fompeyrine, F. Nolting, 2000, Nature.