David T. Danielson

发表

Surface-energy-driven dewetting theory of silicon-on-insulator agglomeration

Jurgen Michel, Lionel C. Kimerling, Daniel K. Sparacin, 2006 .

High performance Ge p-i-n photodetectors on Si

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2005 .

Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

Judy L. Hoyt, Lionel C. Kimerling, O. O. Olubuyide, 2006 .

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si ( 100 )

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2005 .

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, 2007 .