J.W. McPherson

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

W. Mckee, J. McPherson, R. Tsu, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown

J.W. McPherson, H.C. Mogul, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

AC electromigration characterization and modeling of multilayered interconnects

W. Hunter, J. McPherson, J.W. McPherson, 1993, 31st Annual Proceedings Reliability Physics 1993.

Acceleration Factors for Thin Gate Oxide Stressing

J. McPherson, D. Baglee, J.W. McPherson, 1985, 23rd International Reliability Physics Symposium.

Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields

J. McPherson, E. Ogawa, Jinyoung Kim, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Breakdown characteristics of interconnect dielectrics

J. McPherson, E. Ogawa, G.S. Haase, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown

J. McPherson, G.S. Haase, J.W. McPherson, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Stress Dependent Activation Energy

J. McPherson, J.W. McPherson, 1986, 24th International Reliability Physics Symposium.