J.-F. Damlencourt

发表

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Emmanuel Augendre, Sorin Cristoloveanu, C. Le Royer, 2010 .

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

Olivier Renault, P. Besson, François Martin, 2002 .

Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

G. Ghibaudo, F. Andrieu, T. Ernst, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

20nm gate length trigate pFETs on strained SGOI for high performance CMOS

X. Garros, O. Faynot, P. Batude, 2010, 2010 Symposium on VLSI Technology.

Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

X. Le Roux, D. Marris-Morini, P. Crozat, 2007, 2007 4th IEEE International Conference on Group IV Photonics.

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Yves Morand, Yves Campidelli, Sorin Cristoloveanu, 2008 .

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

Emmanuel Augendre, Sorin Cristoloveanu, Laurent Clavelier, 2009 .

A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio

O. Faynot, M. Vinet, D. Lafond, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Dual channel and strain for CMOS co-integration in FDSOI device architecture

F. Andrieu, O. Weber, F. Allain, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Yves Morand, Laurent Clavelier, C. Licitra, 2007 .

Investigation of HfO2 Dielectric Stacks Deposited by ALD with a Mercury Probe

X. Garros, G. Reimbold, D. Blin, 2002, 32nd European Solid-State Device Research Conference.

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Olivier Renault, François Martin, L. G. Gosset, 2002 .

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Y. Bogumilowicz, G. Rolland, J. Hartmann, 2005 .

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

O. Faynot, M. Vinet, C. Tabone, 2010, IEEE Electron Device Letters.

MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels

Yves Morand, Gilles Reimbold, Serge Blonkowski, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

Metal gate and high-k integration for advanced CMOS devices

Thomas Skotnicki, Sorin Cristoloveanu, Simon Deleonibus, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

High quality Germanium On Insulator wafers with excellent hole mobility

Yves Morand, Sorin Cristoloveanu, Laurent Clavelier, 2007 .