X. Q. Shen

发表

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Feng Xu, Z. J. Yang, Hajime Okumura, 2010 .

Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors

M. Shimizu, H. Okumura, H. Cho, 2002 .

Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs

T. Nishinaga, X. Q. Shen, X. Shen, 1999 .

Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

T. Nishinaga, X. Q. Shen, D. Kishimoto, 1996 .

Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations

M. Shimizu, H. Okumura, X. Shen, 2002 .

High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy

M. Shimizu, H. Okumura, T. Ide, 2001 .

Growth and characterizations of AlGaN/GaN heterostructures using multi-AlN buffer layers in plasma-assisted molecular beam epitaxy

M. Shimizu, H. Okumura, T. Ide, 2001 .

Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

S. Chichibu, H. Okumura, T. Ide, 2001 .

Molecular beam epitaxial growth of GaAs, AlAs and Al0.45Ga0.55As on (111) A-(001) V-grooved substrates

Masaaki Tanaka, K. Wada, T. Nishinaga, 1994 .