Ruqi Han

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

Mansun Chan, Shengdong Zhang, Johnny K. O. Sin, 2002 .

A novel sub-50 nm poly-Si gate patterning technology

Mansun Chan, Shengdong Zhang, Dacheng Zhang, 2001, Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239).

Ionic doping effect in ZrO2 resistive switching memory

Bing Sun, Jinfeng Kang, Bin Yu, 2010 .

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

Xing Zhang, Bing Sun, Chen Chen, 2008 .

Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO2 and ZrO2: A First Principles Study

Shimeng Yu, Jinfeng Kang, Lang Zeng, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Fabrication and characteristics of ZnO-based thin film transistors

Jinfeng Kang, Shengdong Zhang, Gang Du, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

A self-aligned, electrically separable double-gate MOS transistor technology for dynamic threshold voltage application

Ru Huang, Xinnan Lin, Mansun Chan, 2003 .

Analytical modeling for the collector current in SOI gate-controlled hybrid transistor

Ru Huang, Yang Yuan Wang, Ruqi Han, 1996 .

A self-aligned double-gate mos transistor technology with individually addressable gates

Ru Huang, Shengdong Zhang, Ping K. Ko, 2002, 2002 IEEE International SOI Conference.

On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells

Jinfeng Kang, Lifeng Liu, Yi Wang, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.