B. D. Briggs

Analysis of nonpolar resistive switching exhibited by Al/CuxO/Cu memristive devices created via room temperature plasma oxidation

N. C. Cady, N. R. McDonald, S. M. Bishop, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices

N. C. Cady, N. Cady, R. Matyi, 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

Ion implantation synthesized copper oxide-based resistive memory devices

Nathaniel C. Cady, Steven W. Novak, Richard J. Matyi, 2011 .

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

Nathaniel C. Cady, Kevin D. Leedy, B. Butcher, 2011 .