Fatemeh Shahedipour-Sandvik

Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering

Vibhu Jindal, James R. Grandusky, Neeraj Tripathi, 2007 .

Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Xian-An Cao, S. Arthur, F. Shahedipour-Sandvik, 2004 .

Development of strain reduced GaN on Si "111… by substrate engineering

Vibhu Jindal, James R. Grandusky, Muhammad Arif, 2005 .

Identification of important growth parameters for the development of high quality Alx>0.5Ga1−xN grown by metal organic chemical vapor deposition

Vibhu Jindal, James R. Grandusky, Neeraj Tripathi, 2007 .

Development of native, single crystal AlN substrates for device applications

Leo J. Schowalter, James R. Grandusky, S. B. Schujman, 2006 .

Atomic-layer Deposition for Improved Performance of III-N Avalanche Photodiodes

Shouleh Nikzad, John Hennessy, Puneet Suvarna, 2014 .