H. Werner

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Secondary Ion Mass Spectrometry SIMS V

A. Benninghoven, R. Colton, D. Simons, 1986 .

The influence of selective sputtering on surface composition

N. Warmoltz, H. Werner, 1976 .

Depth Profiling Using Sputtering Methods

H. Werner, P. Boudewijn, 2002 .

Interface and thin film analysis: Comparison of methods, trends

H. Werner, A. Torrisi, 1990 .

A comparison of SIMS with other techniques based on ion-beam solid interactions

H. Werner, P. Boudewijn, 1984 .

Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurements

H. Werner, A. Morgan, 1976 .

Secondary ion mass spectrometry: SIMS VI

A. Benninghoven, H. Werner, A. Huber, 1988 .

On the abundance of molecular ions in secondary ion mass spectrometry

H. Werner, A. Morgan, 1976 .

Semiquantitative analyses by secondary ion mass spectrometry using one fitting parameter

H. Werner, A. Morgan, 1978 .

Investigation of Solids by Means of an Ion-Bombardment Mass Spectrometer

H. Werner, 1969 .

On the use of the saha-eggert equation for quantitative sims analysis using argon primary ions

W. Steiger, H. Werner, F. Rüdenauer, 1976 .

SIMS Analysis of Aqueous Corrosion Profiles in Soda‐Lime‐Silica Glass

H. Werner, R. G. Gossink, H. D. Grefte, 1979 .

Modern methods for thin film and surface analyses

H. Werner, 1980 .

Theoretical and experimental aspects of secondary ion mass spectrometry

H. Werner, 1974 .

The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis

H. Werner, 1984 .

Secondary ion mass spectrometry of compositional changes in garnet films

H. Werner, A. Morgan, H. Jonker, 1975 .

Secondary Ion Mass Spectrometry SIMS IV

A. Benninghoven, H. Werner, R. Shimizu, 1984 .

Quantitative SIMS studies with a uranium matrix

H. Werner, A. Morgan, 1977 .

Profiles of boron implantations in silicon measured by secondary ion mass spectrometry

H. Werner, W. K. Hofker, D. P. Oosthoek, 1973 .

The measurement of small ion currents with the aid of photomultipliers

H. Werner, H. D. Grefte, J. Berg, 1972 .

DETERMINATION OF THE ION-INDUCED ELECTRON YIELD FROM A STATISTICAL TREATMENT OF PULSE-HEIGHT DISTRIBUTION CURVES MEASURED WITH AN ION-ELECTRON-SCINTILLATION DETECTOR.

H. Werner, J. Berg, 1972 .

Measurement of small ion currents in a mass spectrometer with a scintillation detector

H. Werner, H. D. Grefte, 1967 .

Test of a quantitative approach to secondary ion mass spectrometry on glass and silicate standards

H. Werner, A. Morgan, 1977 .

Quantitative analysis of low alloy steels by secondary ion mass spectrometry

H. Werner, A. Morgan, 1976 .

New Developments in Secondary Ion Mass Spectrometry

H. Werner, 1980 .

Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends

H. W. Werner, A. Benninghoven, H. Werner, 1987 .

DESIGN OF A SMALL MAGNETIC-SECTOR MASS SPECTROMETER WITH REDUCED MASS DISCRIMINATION.

H. Werner, A. Venema, A. Linssen, 1972 .

A study on mass discrimination in a magnetic sector mass spectrometer

H. Werner, 1974 .

A study of a mass spectrometer ion source by means of computer-calculated ion trajectories

H. Werner, 1974 .

Secondary ion mass spectrometry (Chemical analysis, vol. 86.) : Wiley, New York, 1987 (ISBN 0-471-01056-1). xxxv+1227 pp. Price £143.00

A. Benninghoven, H. Werner, F. Rüdenauer, 1987 .

Molecular versus atomic secondary ion emission from solids

H. Werner, A. Morgan, 1978 .

The use of secondary ion mass spectrometry in surface analysis

H. Werner, 1975 .

Applications of Secondary Ion Mass Spectrometry (SIMS)

H. Werner, 1977 .

Quantitative secondary ion mass spectrometry: A review

H. Werner, 1980 .

Introduction to Secondary Ion Mass Spectrometry (SIMS)

H. Werner, 1978 .

The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon

N. Warmoltz, H. Werner, H. J. Tolle, 1981 .

The effect of water vapour and hydrogen on the gas composition of a sealed-off CO2 laser

W. Witteman, H. Werner, 1968 .

Application of characteristic secondary ion mass spectra to a depth analysis of copper oxide on copper

H. Werner, H. D. Grefte, J. Berg, 1973 .

Modern Methods for Solid Surface and Thin Film Analysis

H. Werner, A. Morgan, 1978 .

Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles

N. Koeman, H. Werner, W. K. Hofker, 1974 .

Influence of annealing on the concentration profiles of boron implantations in silicon

H. Werner, W. K. Hofker, D. P. Oosthoek, 1973 .

Quantitative analysis of trace and major elements in thin sections of soils with the secondary ion microscope (Cameca)

H. Werner, E. Bisdom, P. Boudewijn, 1983 .

Quantitative SIMS Depth Profiling of Semiconductor Materials and Devices

H. W. Werner, P. R. Boudewijn, H. Werner, 1986 .

Redistribution of Background Impurities in Silicon Induced by Ion Implantation and Annealing

N. Koeman, H. Werner, W. K. Hofker, 1975 .

Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon

H. Werner, W. K. Hofker, D. P. Oosthoek, 1973 .

Beam techniques for the analysis of poorly conducting materials

N. Warmoltz, H. Werner, 1984 .

The dependence on the angle of incidence of the steady state sputter yield of silicon bombarded by oxygen ions

N. Warmoltz, H. Werner, A. Morgan, 1980 .

Secondary Ion Mass Spectrometry SIMS III

A. Benninghoven, M. Riedel, H. Werner, 1982 .

Secondary Ion masse spectrometry (Proceedings of the 6th int. conf. on Secondary Ion Mass Spectrometry (SIMS VI) Paris Sept. 13-18, 1987)

A. Benninghoven, H. Werner, A. Huber, 1988 .

The influence of the simultaneous action of several independent stochastic processes on the crater‐shape during sputter depth profiling

N. Warmoltz, H. Werner, J. Hornstra, 1983 .

The depth dependence of the depth resolution in sputter profiling

H. Werner, 1982 .

In-depth concentration profiling of garnet epilayers using secondary ion mass spectrometry

H. Werner, A. Morgan, J. Gourgout, 1977 .

Investigation of surface layers by SIMS and SIIMS

H. Werner, H. D. Grefte, 1973 .