H. Tan

发表

La doped PZT 60/40 films by MOD technology

Weiguang Zhu, W. Lu, Z. Q. Liu, 1995 .

A transmission-line theory for heat conduction in multilayer thin films

H. Tan, P. Hui, P. Hui, 1994 .

ARXPS analysis of surface compositional change in ion bombarded GaAs (100)

A. Wee, K. Tan, Jisheng Pan, 1997 .

Thickness dependency of the structure and laser irradiation stability of filtered cathodic vacuum arc grown carbon films for heat assisted magnetic recording overcoat

B. Tay, R. Ji, H. Tan, 2013 .

Transport of vacuum arc plasma through an off-plane double bend filtering duct

B. Tay, E. Liu, H. Tan, 1999 .

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

Zhili Sun, S. Lau, B. Tay, 2000 .

Role of thermal conductivity and optical absorption coefficient of amorphous silicon in pulsed laser melting

C. Ong, C. K. Ong, H. Tan, 1988 .

Tribological and optical properties of hydrogen‐free amorphous carbon films with varying sp3/sp2 composition

B. Tay, E. Liu, H. Lee, 1999 .

The effect of deposition conditions on the properties of TiN thin films prepared by filtered cathodic vacuum-arc technique

S. Y. Teo, B. Tay, D. Chua, 1999 .

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo‐organic decomposition technology

X. Yao, W. Zhu, M. Tse, 1996 .

Raman, FT-IR and dielectric studies of PZT 40/60 films deposited by MOD technology

Weiguang Zhu, Z. Q. Liu, M. Tse, 1995 .

Micro-Raman spectroscopic analysis of tetrahedral amorphous carbon films deposited under varying conditions

Zhili Sun, B. Tay, E. Liu, 1999 .

Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure

B. Tay, E. Liu, J. R. Shi, 1999 .

Nanocrystallites in tetrahedral amorphous carbon films

W. Milne, S. Ravi, H. Tan, 1996 .

Preferential orientation of titanium carbide films deposited by a filtered cathodic vacuum arc technique

W. Y. Cheung, S. Lau, B. Tay, 2001 .

Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces

A. K. Tan, C. Ong, H. Tan, 1988 .

Temperature distributions in a heat dissipation system using a cylindrical diamond heat spreader on a copper heat sink

Hai Siong Tan, H. Tan, P. Hui, 1994 .

Studies of diamond films/crystals synthesized by oxyacetylene combustion flame technique

B. H. Tan, J. Ahn, Weiguang Zhu, 1995, Journal of Materials Science.

Green Synthesis of Silicon Carbide Nanowhiskers by Microwave Heating of Blends of Palm Kernel Shell and Silica

K. L. Foo, U. Hashim, M. Arshad, 2016 .

AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams

Andrew T. S. Wee, A. Wee, J. S. Pan, 1997 .

Theory of non-radiative capture of carriers by multiphonon processes for deep centres in semiconductors

S. Ng, Soon-Chye Ng, Hai Siong Tan, 1994 .

Argon incorporation and surface compositional changes in InP(100) due to low‐energy Ar+ ion bombardment

K. L. Tan, A. Wee, J. S. Pan, 1996 .

Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs

A. Wee, J. S. Pan, H. Tan, 1998 .

Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc

S. Lau, B. Tay, H. Tan, 2001 .

Laser‐induced lattice tensile strain in silicon

C. Ong, M. H. Kuok, S. Ng, 1984 .

Determination of Si crystal orientation by pulsed laser

C. Ong, S. Ng, H. Tan, 1984 .

XPS studies on nitridation of InP(100) surface by ion beam bombardment

Andrew T. S. Wee, Jisheng Pan, A. Wee, 1996 .

A.c. electrical behaviour of cobaltcomplex-doped polyimide films

E. Khor, S. Ng, H. Tan, 1990 .

Temperature Dependence of Interband Optical Absorption of Silicon at 1152,1064, 750, and 694 nm

C. K. Ong, C. K. Ong, H. Tan, 1984 .

A computer controlled system for transient capacitance measurements of deep levels in semiconductor

H. S. Woon, S. Ng, H. Tan, 1988 .

Optical absorption measurements of band-gap shrinkage in moderately and heavily doped silicon

C. Ong, H. Tan, S. Aw, 1991 .

Minimization of microwave reflections from EC-coated glass slabs

E. Lim, H. Tan, P. Hui, 1998 .

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

K. L. Tan, A. Wee, J. S. Pan, 1996 .

Calculations of melting threshold energies of crystalline and amorphous materials due to pulsed-laser irradiation

C. K. Ong, H. Tan, E. H. Sin, 1986 .

Thickness Dependence of Threshold Energy Density for Pulsed‐Laser Melting of Silicon

S. Ng, H. Tan, 1986 .

Raman studies of tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc

Beng Kang Tay, Zhili Sun, Xu Shi, 1998 .

Measurement of the thermal diffusivity of mercury

H. Tan, S. L. Chan, C. Ang, 1974 .

Three‐layer thermal‐diffusivity problem applied to measurements on mercury

H. Tan, S. L. Chan, C. Ang, 1973 .

Study of tin films by filtered cathodic vacuum arc techniques

B. Tay, H. Tan, L. K. Cheah, 1999 .

Heat-flow calculation of pulsed excimer ultraviolet laser’s melting of amorphous and crystalline silicon surfaces

C. K. Ong, C. K. Ong, H. Tan, 1986 .

Threshold Energies for the Melting of Si And Al during Pilsed-Laser Irradiation

C. Ong, H. Tan, E. H. Sin, 1984 .

An easy and accurate method to determine simultaneously the free energy level and the capture cross section of a trap centre

S. Ng, H. Tan, M. Han, 1993 .

AES analysis of silicon nitride formation by 10 keV N+ and N2+ ion implantation

A. Wee, H. Tan, C. Huan, 1996 .

Monte Carlo simulation of crystal growth from silicon melt

A. K. Tan, C. Ong, H. Tan, 1988 .

Heat treatment of tetrahedral amorphous carbon films grown by filtered cathodic vacuum-arc technique

B. Tay, W. Milne, E. Liu, 1999 .