S. Arulkumaran

G. Ng, K. Ang, Zhi Hong Liu, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Xing Zhou, Geok Ing Ng, Binit Syamal, 2016, IEEE Transactions on Electron Devices.

Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage

G. Ng, K. Ang, S. Arulkumaran, 2015 .

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

G. Ng, T. Egawa, S. Arulkumaran, 2011 .

Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

N. G. Ing, T. Egawa, S. Arulkumaran, 2011 .

Improved microwave noise performance in 0.15μm AlGaN/AlN/GaN HEMTs on silicon

G. Ng, S. Arulkumaran, S. Vicknesh, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

G. Ng, S. Arulkumaran, Z. Liu, 2009, 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

N. G. Ing, T. Egawa, S. Arulkumaran, 2009 .

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

G. Ng, Zhihong Liu, S. Arulkumaran, 2009 .

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

T. Egawa, T. Jimbo, H. Ishikawa, 2003, IEEE Electron Device Letters.

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

T. Egawa, K. Baskar, Y. Sano, 2005 .

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

G. Ng, Zhen Liu, Hong Zhou, 2011 .

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

G. Ng, Zhihong Liu, G. Ye, 2015 .

Low specific ON-resistance and high Figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks

G. Ng, T. Egawa, H. Wang, 2013, 71st Device Research Conference.

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

Hong Wang, G. Ng, K. Teo, 2012 .

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Hong Wang, G. Ng, K. Ang, 2013 .

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

G. Ng, Zhihong Liu, Hong Zhou, 2011 .

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

S. C. Foo, G. Ng, Xing Zhou, 2015 .

GaN HEMT compact model for circuit simulation

S. B. Chiah, G. Ng, Xing Zhou, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

C. H. Lee, G. Ng, Zhihong Liu, 2010 .

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Guo-Qiang Lo, Geok Ing Ng, S. Vicknesh, 2012 .

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

T. Egawa, H. Ishikawa, S. Arulkumaran, 2005 .

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

G. Ng, Xing Zhou, S. Arulkumaran, 2015 .

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

G. Ng, K. Radhakrishnan, S. Lourdudoss, 2006 .

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

G. Ng, K. Radhakrishnan, H. Wang, 2005, 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks.

Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si

G. Ng, Zhihong Liu, Hong Zhou, 2011 .

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

C. H. Lee, G. Ng, K. Radhakrishnan, 2010 .

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Takashi Jimbo, Yoshiaki Sano, Hiroyasu Ishikawa, 2004 .

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra‐heavy 131Xe+ implantation

G. Ng, J. Kennedy, K. Ang, 2017 .

Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment

G. Ng, S. Arulkumaran, S. Vicknesh, 2013, IEEE Electron Device Letters.

Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulators

T. Egawa, K. Baskar, Y. Sano, 2005 .

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

M. Umeno, T. Egawa, T. Jimbo, 1998 .

Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

G. Ng, H. Amano, S. Nitta, 2020, Applied Physics Express.

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

G. Ng, S. Arulkumaran, S. Vicknesh, 2014 .

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

G. Ng, D. Mitchell, J. Kennedy, 2021 .

Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

G. Ng, Zhi Hong Liu, S. Arulkumaran, 2010, IEEE Transactions on Electron Devices.

Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate

S. C. Foo, G. Ng, S. Arulkumaran, 2011, IEEE Electron Device Letters.

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

G. Ng, S. Arulkumaran, S. Vicknesh, 2013 .

Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

T. Egawa, H. Ishikawa, S. Arulkumaran, 2005 .

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

N. G. Ing, H. Amano, J. Kennedy, 2020, Micromachines.

Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

G. Ng, J. Kennedy, S. Tripathy, 2016 .

Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

G. Ng, S. L. Teo, M. K. Kumar, 2012, 70th Device Research Conference.

Band alignment between GaN and ZrO2 formed by atomic layer deposition

G. Ng, Hong Wang, K. Ang, 2014 .

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

G. Ng, S. Arulkumaran, K. Ranjan, 2019, IEEE Journal of the Electron Devices Society.

High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

G. Ng, S. Tripathy, S. Arulkumaran, 2014, IEEE Electron Device Letters.

Investigations of the Electrical and Structural Characteristics of 50 MeV7Li Implanted SI-InP

K. Asokan, D. Kanjilal, S. Arulkumaran, 1998 .

Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

N. G. Ing, S. C. Foo, S. Arulkumaran, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr+ Ion implantation

G. Ng, J. Kennedy, S. Arulkumaran, 2014, 72nd Device Research Conference.

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Hong Wang, Geok Ing Ng, K. Radhakrishnan, 2007 .

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

Structural and Electrical Characterization of Al x Ga1 − x N / GaN Interfaces for UV Photodetectors

G. Ng, E. Alarcón-Lladó, S. Tripathy, 2010 .

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

Improved electrical properties on the anodic oxide/InP interface for MOS structures

S. Arulkumaran, N. Dharmarasu, J. Kumar, 1998 .

Current collapse-free i-GaN /AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2004 .

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Gang Ye, Hong Wang, Yang Li, 2013 .

Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

S. C. Foo, G. Ng, S. Arulkumaran, 2010, IEEE Electron Device Letters.

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Zhen Liu, Geok Ing Ng, S. C. Foo, 2009 .

Investigations on the evaluation of schottky barrier diode parameters of the proton irradiated Ti/n-GaAs

S. Arulkumaran, J. Kumar, P. Jayavel, 2000 .

On the enhancement of effective barrier height in {Ti}/{n- GaAs} Schottky barrier diodes

S. Arulkumaran, N. Dharmarasu, J. Arokiaraj, 1996 .

Investigations on Au, Ag, and Al schottky diodes on liquid encapsulated czochralski grown n-GaAs〈100〉

P. Santhanaraghavan, P. Ramasamy, S. Arulkumaran, 1995 .

Investigations on Au, Ag, Encapsulated Czochralski and AI Schottky Diodes on Grown n-GaAs(100) Liquid

P. Santhanaraghavan, P. Ramasamy, S. Arulkumaran, 1995 .

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Govindo J. Syaranamual, Chee Lip Gan, Riko I. Made, 2016, Microelectron. Reliab..

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2003 .

Non-linear thermal resistance model for the simulation of high power GaN-based devices

G. Ng, K. Radhakrishnan, J. Mateos, 2021 .

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

G. Ng, K. Ang, Zhihong Liu, 2017 .

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2005 .

Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics

K. Nair, S. Arulkumaran, N. Dharmarasu, 1998 .

Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

Lawrence Selvaraj, Hiroyasu Ishikawa, Takashi Egawa, 2006 .

Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, S. Arulkumaran, 2003 .

Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

S. Arulkumaran, G. I. Ng, G. Ng, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Improved recess‐ohmics in AlGaN/GaN high‐electron‐mobility transistors with AlN spacer layer on silicon substrate

Liu Zhihong, Ng Geok Ing, N. G. Ing, 2010 .

Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon

T. Egawa, H. Ishikawa, S. Arulkumaran, 2004 .

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Hiroshi Amano, Geok Ing Ng, Abhinay Sandupatla, 2019, Sensors.

Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

T. Egawa, Baijun Zhang, H. Ishikawa, 2005 .

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2002 .

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

T. Egawa, H. Ishikawa, O. Oda, 2004 .

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Zhili Sun, Nethaji Dharmarasu, K. Radhakrishnan, 2010 .

Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals

P. Santhanaraghavan, P. Ramasamy, S. Arulkumaran, 1995 .

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Geok Ing Ng, S. Arulkumaran, S. C. Foo, 2010, IEEE Electron Device Letters.

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

G. Ng, K. Teo, S. Rajan, 2015 .

Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

G. Ng, S. Arulkumaran, 2015, 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).

In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

G. Ng, S. Rajan, O. Shoron, 2014, 2014 IEEE International Electron Devices Meeting.

Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Hiroyasu Ishikawa, Takashi Egawa, T. Egawa, 2005 .

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Guo-Qiang Lo, Hong Wang, Geok Ing Ng, 2012 .

High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon

C. H. Lee, G. Ng, Zhen Liu, 2007 .

Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

S. C. Foo, G. Ng, S. Tripathy, 2015 .

Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si

S. Arulkumaran, G. Ng, S. Arulkumaran, 2009, IEEE Microwave and Wireless Components Letters.