Z. Bougrioua

发表

LETTER TO THE EDITOR: Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

Ingrid Moerman, Martin Eickhoff, Eva Monroy, 2002 .

A planar micro thermoelectric generator with high thermal resistance

Zheng Yuan, Tuami Lasri, Didier Leclercq, 2015 .

Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology

Zheng Yuan, Tuami Lasri, Didier Leclercq, 2017, Journal of Microelectromechanical Systems.

A new method to improve the efficiency of the heat flow path of a micro thermoelectric generator

T. Lasri, K. Ziouche, P. Godts, 2012 .

Influence of process technology on DC-performance of GaN-based HFETs

T. Rotter, I. Moerman, M. Marso, 2002 .

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

N. Klein, S. Vitusevich, H. Hardtdegen, 2009 .

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

J. Massies, Y. Cordier, S. Chenot, 2008 .

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

P. Gibart, M. Azize, Z. Bougrioua, 2007 .

Effect of SiN Treatment on Optical Properties of InxGa1−xN/GaN MQW Blue LEDs

A. Khalfallah, Z. Benzarti, Z. Bougrioua, 2017, Journal of Electronic Materials.

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

P. Desjardins, R. Masut, S. Guillon, 1997 .

METALORGANIC VAPOR PHASE EPITAXY OF COHERENT SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS IN INP(001)

P. Desjardins, R. Masut, S. Guillon, 1997 .

Improved AlGaN/GaN HEMTs using Fe doping

J. Grajal, E. Muñoz, A. Braña, 2005, Conference on Electron Devices, 2005 Spanish.

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

I. Moerman, E. Calleja, A. Braña, 2003 .

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Grajal, F. Calle, J. Pedrós, 2010 .

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

D. Mayer, N. Klein, S. Vitusevich, 2009 .

Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodes

S. Chenot, O. Tottereau, P. Mierry, 2005 .

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

A. Cavaleiro, M. Evaristo, D. Vignaud, 2021 .

Performances of AlGaN/Ga Technolog

N. Vellas, M. Germain, D. Ducatteau, 2004 .

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

N. Klein, S. Vitusevich, H. Hardtdegen, 2008 .

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

J. Massies, Y. Cordier, M. Hugues, 2006 .

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennégués, Z. Bougrioua, F. Mathal, 2006 .

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

P. Vennégués, M. Leroux, É. Frayssinet, 2007 .

Simultaneous fabrication of superhydrophobic and superhydrophilic polyimide surfaces with low hysteresis.

T. Lasri, K. Ziouche, P. Godts, 2011, Langmuir : the ACS journal of surfaces and colloids.

Strain relaxation in (Al,Ga)N/GaN heterostructures

P. Vennégués, O. Tottereau, P. Mierry, 2005 .

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

J. Ristić, E. Calleja, A. Trampert, 2007 .

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

N. Grandjean, P. Vennégués, J. Zúñiga-Pérez, 2009 .

Electrical conductivity improvement of Fe doped ZnO nanopowders

K. Khirouni, Z. Benzarti, Z. Bougrioua, 2020, Materials Research Bulletin.

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

T. Lasri, G. Savelli, K. Ziouche, 2014 .

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J. Harris, T. Martin, I. Moerman, 2001 .

Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures

W. Knap, M. Sakowicz, R. Tauk, 2005 .

Band-edge photoluminescence and reflectivity of nonpolar (112̄0) and semipolar (112̄2) GaN formed by epitaxial lateral overgrowth on sapphire

P. Vennégués, M. Leroux, B. Vinter, 2008 .

Metal-based folded-thermopile for 2.5D micro-thermoelectric generators

K. Ziouche, Z. Bougrioua, Ibrahim Bel-Hadj, 2022, Sensors and Actuators A: Physical.

Bilayer Cr/Au contacts on n-GaN

A. Tóth, B. Pécz, B. Beaumont, 2012 .

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

E. Delos, Bertrand Boudart, Marianne Germain, 2006, Microelectron. Reliab..

Thermoelectric properties of nanostructured porous-polysilicon thin films

K. Ziouche, Z. Bougrioua, Ibrahim Bel-Hadj, 2021 .

Unpackaged infrared thermoelectric microsensor realised on suspended membrane by silicon technology

Tuami Lasri, Pascale Godts, Didier Leclercq, 2012 .

Magnesium diffusion profile in GaN grown by MOVPE

T. Boufaden, B. El Jani, Zahia Bougrioua, 2008 .

Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique

G. Patriarche, P. Roussel, Yong‐Hoon Cho, 2013 .

Probing technique for localized thermal conductivity measurement

T. Lasri, K. Ziouche, D. Leclercq, 2015 .

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

J. Harris, I. Moerman, I. Harrison, 2002 .

Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

J. Harris, I. Moerman, I. Harrison, 2001 .

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

D. Ferré, Z. Bougrioua, J. Farvacque, 1996 .

Heterostructure field effect transistor types with novel gate dielectrics

T. Rotter, H. Klausing, D. Mistele, 2001 .

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

A. Braña, B. Beaumont, P. Gibart, 2005 .

Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

M. Laügt, M. Azize, Z. Bougrioua, 2005 .

Engineering of an insulating buffer and use of aln interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Ingrid Moerman, L. C. Nistor, Eva Monroy, 2003 .

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

P. Vennégués, O. Tottereau, M. Azize, 2005 .

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Nicolas Grandjean, Denis Martin, Jean-Michel Chauveau, 2012 .

Carrier mobility versus carrier density inAlxGa1−xN/GaNquantum wells

Z. Bougrioua, J. Farvacque, 2003 .

Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Mathieu Leroux, T. Gühne, Zahia Bougrioua, 2007 .

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon‐ion implant‐isolation technology

C. Gaquière, N. Vellas, M. Germain, 2005 .

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M-Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Zahia Bougrioua, P. Vennégués, Z. Bougrioua, 2007 .

Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures

J. Grajal, F. Calle, Y. Takagaki, 2005 .

Anisotropic propagation of surface acoustic waves on nitride layers

M. Eickhoff, J. Grajal, F. Calle, 2004 .

Carrier dynamics in Fe‐doped GaN epilayers

K. Jarašiūnas, T. Malinauskas, R. Aleksieju̅nas, 2009 .

Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

J. Pernot, M. Azize, P. Muret, 2007 .

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

K. Neimontas, T. Malinauskas, B. Beaumont, 2007 .

Free-carrier mobility in GaN in the presence of dislocation walls

I. Moerman, Z. Bougrioua, J. Farvacque, 2001 .

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter, O. Katz, A. Horn, 2003 .

Detailed interpretation of electron transport in n-GaN

J. Harris, C. Humphreys, Z. Bougrioua, 2003 .

Evidence of an impurity band at an n-GaN/sapphire interface

J. Harris, I. Moerman, R. Jackman, 2003 .

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. Harris, I. Moerman, B. Hamilton, 1999 .

Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films

A. Cavaleiro, M. Evaristo, A. Khalfallah, 2023, Materials Chemistry and Physics.

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

I. Moerman, S. Irvine, Z. Bougrioua, 2000 .

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

B. Jani, Z. Benzarti, I. Halidou, 2006 .

Mosaicity and stress effects on luminescence properties of GaN

B. Jani, Z. Benzarti, I. Halidou, 2008 .

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Zahia Bougrioua, P. Vennégués, P. Vennéguès, 2006 .

Material optimisation for AlGaN/GaN HFET applications

I. Moerman, C. Humphreys, Nikhil Sharma, 2001 .

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

I. Moerman, Z. Bougrioua, J. Farvacque, 2000 .

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. Harris, I. Moerman, B. Hamilton, 1999 .

Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE

P. Demeester, J. Harris, I. Moerman, 1999 .

Reliability of Schottky contacts on AlGaN.

Ingrid Moerman, Eva Monroy, Pierre Ruterana, 2001 .

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

I. Moerman, O. Lebedev, G. V. Tendeloo, 1999 .

Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures

I. Moerman, M. Germain, G. V. Tendeloo, 2002 .

2DEG Mobility in AlGaN-GaN Structures Grown by LP-MOVPE

I. Moerman, Z. Bougrioua, J. Farvacque, 2001 .

Chemical mapping of InGaN MQWs

I. Moerman, C. Humphreys, N. Sharma, 2001 .

Electrical behaviour of lateral Al/n-GaN/Al structures

B. Pécz, B. Beaumont, L. Dobos, 2010 .

Dispersion of Heat Flux Sensors Manufactured in Silicon Technology

Didier Leclercq, Katir Ziouche, Zahia Bougrioua, 2016, Sensors.

Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors

W. Knap, J. Łusakowski, M. Sakowicz, 2006 .

Strain and microstructure in Fe‐doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

M. Leroux, M. Laügt, P. Gibart, 2006 .