N. Ketteniß

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

B. Holländer, A. Vescan, M. Heuken, 2012, Journal of Electronic Materials.

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

B. Holländer, A. Vescan, M. Heuken, 2013, Journal of Electronic Materials.

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

O. Ambacher, A. Vescan, H. Hahn, 2012 .

Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics

A. Vescan, H. Hahn, H. Kalisch, 2012 .

Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices

B. Holländer, A. Vescan, H. Kalisch, 2012 .

Processing and characterization of recessed-gate AlGaN/GaN HFETs

A. Vescan, R. Jansen, A. Noculak, 2008, 2008 International Conference on Advanced Semiconductor Devices and Microsystems.