W. Lu

Normally-OFF AlGaN/GaN MOS-HEMT with a two-step gate recess

P. Yu, Jianzhi Wu, W. Lu, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

p-Type SiGe transistors with low gate leakage using SiN gate dielectric

I. Adesida, R. Hammond, S. Koester, 1999, IEEE Electron Device Letters.

High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

I. Adesida, A. Kuliev, V. Kumar, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Mengke Li, P. Liu, W. Lu, 2001 .

A study of on-state and off-state breakdown voltages in GaN MESFETs

S. Bahl, I. Adesida, A. Kuliev, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).