A. Sakamoto

Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology

J. Gill, C.-C. Yang, A. Carbone, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

J. Gill, D. Mocuta, D. Greenlaw, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL

J. Gill, C.-C. Yang, A. Carbone, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules

J. Gill, S. Nguyen, K. Ida, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology

J. Gill, M. Shinosky, T. Ema, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..