Walther Fuhs

Homo-epitaxial Si absorber layers grown by low-temperature ECRCVD

U. Knipper, B. Rau, Stefan Gall, 2004 .

Step-by-step excimer laser induced crystallization of a-Si:H

N. H. Nickel, W. Fuhs, N. Nickel, 2000 .

Temperature-dependent effects in field-effect measurements on hydrogenated amorphous silicon thin-film transistors

K. Weber, P. Thomas, R. Schropp, 1988 .

Aluminum-induced crystallization of amorphous silicon

W. Fuhs, O. Nast, Stefan Gall, 2002 .

Influence of hydrogen on the structural order of microcrystalline silicon during the growth process

W. Pilz, W. Fuhs, N. Nickel, 1998 .

Molecular models and activation energies for bonding rearrangement in plasma-deposited a − SiN x : H dielectric thin films treated by rapid thermal annealing

Germán González-Díaz, W. Bohne, J. Röhrich, 2001 .