S. Kishino

发表

Optimizing gettering conditions for VLSI chips using simple yield model

H. Yoshida, S. Kishino, H. Niu, 1993 .

Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film

Y. Fujii, T. Tokuyama, S. Kishino, 1967 .

Contactless transient spectroscopy for the measurement of localized states in semiconductors

H. Yoshida, S. Kishino, 1998 .

Growth and propagation mechanism of 〈110〉‐oriented dark‐line defects in GaAs‐Ga1−xAlxAs double heterostructure crystals

N. Chinone, R. Ito, S. Kishino, 1977 .

Dark‐line defects induced by mechanical bending in GaAs‐Ga1−xAlxAs double‐heterostructure wafers

N. Chinone, R. Ito, S. Kishino, 1976 .

X‐ray topographic observation of dark‐line defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers

N. Chinone, R. Ito, S. Kishino, 1976 .

Electroluminescence observation and x‐ray topographic study of a nitrogen‐doped GaP‐LED

S. Kishino, Kiyohiko Funakoshi, 1976 .

X‐ray topographic study of dark‐spot defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers

R. Ito, S. Kishino, H. Nakashima, 1975 .

Degradation sources in GaAs-AlGaAs double-heterostructure lasers

R. Ito, S. Kishino, H. Nakashima, 1975 .

Lattice mismatch and crystal system in epitaxial garnet films

S. Kishino, S. Isomae, M. Takahashi, 1974 .

Photoluminescence analysis of annealed silicon crystals

M. Tajima, T. Iizuka, S. Kishino, 1980 .

Novel submicrometer MOS devices by self-aligned nitridation of silicide

M. Koyanagi, S. Kishino, Y. Kubota, 1986, IEEE Transactions on Electron Devices.

A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials

Y. Matsushita, S. Kishino, M. Kanamori, 1980 .

A new intrinsic gettering technique using microdefects in Czochralski silicon crystal: A new double preannealing technique

Y. Matsushita, S. Kishino, K. Nagasawa, 1980 .

Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers

T. Iizuka, S. Kishino, K. Nagasawa, 1980 .

First-Principles Calculation of Energy Band Structure of Gallium Arsenide Crystals Using Madelung Potential

H. Yoshida, S. Kishino, K. Sueoka, 2008 .

Local electrical characterization of SOI wafers by scanning probe microscopy

T. Uchihashi, H. Yoshida, S. Kishino, 2002 .

Si‐SiO2 interface states enhanced by oxidation‐induced stacking faults

H. Yoshida, S. Kishino, H. Niu, 1992 .

Photoluminescence mapping study of gettering effect of polycrystalline Si on ultrathin silicon-on-insulator

H. Yoshida, Z. Li, S. Kishino, 2004 .

Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior

Y. Matsushita, T. Iizuka, S. Kishino, 1982 .

Photoluminescence Analysis of Annealed Silicon Crystals

M. Tajima, T. Iizuka, S. Kishino, 1979 .

Novel submicron MOS devices by self-aligned nitridation of silicide (Sanicide)

M. Koyanagi, S. Kishino, Y. Kubota, 1985, 1985 International Electron Devices Meeting.

X-ray topographic study of lattice defects in a gadolinium gallium garnet single crystal

S. Kishino, S. Isomae, M. Ishii, 1974 .

Improved Techniques of Lattice Parameter Measurements Using two X-Ray Beams

S. Kishino, 1972 .

Lifetime improvement in Czochralski‐grown silicon wafers by the use of a two‐step annealing

Y. Matsushita, T. Iizuka, Kazuhiko Yamamoto, 1980 .

Heat‐treatment behavior of microdefects and residual impurities in CZ silicon crystals

Michio Tajima, Takashi Iizuka, Masaru Kanamori, 1979 .

Suppression of oxidation‐stacking‐fault generation by preannealing in N2 atmosphere

S. Kishino, M. Tamura, S. Isomae, 1978 .

Physics of Superconducting Devices and Recent Topics on High T c Superconducting Devices

S. Kishino, 1991 .

Screw-type dislocations due to lattice mismatch in GaP: N/GaP epitaxy

S. Kishino, M. Ogirima, 1975 .

Theoretical Considerations on Bragg-case Diffraction of X-rays at a Small Glancing Angle

K. Kohra, S. Kishino, 1971 .

A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing

H. Shimizu, S. Kishino, T. Aoshima, 1984 .

Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

Y. Matsushita, S. Kishino, M. Kanamori, 1979 .

Anomalous Enhancement of Transmitted Intensity in Asymmetric Diffraction of X-Rays from a Single Crystal

K. Kohra, S. Kishino, Atsuko Noda, 1972 .

Anomalous Transmission in Bragg-Case Diffraction of X-Rays

S. Kishino, 1971 .

Frequency domain lifetime characterization

D. Schroder, H. Yoshida, S. Tan, 2000 .

Shapiro‐like steps from a weakly coupled junction prepared with high‐Tc superconducting materials

S. Kishino, H. Niu, Hideaki Kuroda, 1994 .

Fabrication of Y-Ba-Cu-O superconducting films by electrophoresis with the use of firing in helium ambience

H. Shinkawata, S. Kishino, Y. Hagiwara, 1991 .

X-ray channeling technique using anomalous transmission and its application to si micro-defects induced by heat treatment

S. Kishino, 1978 .

Photoliminescence Analysis of `New Donors' in Silicon

M. Tajima, T. Iizuka, S. Kishino, 1980 .

Preliminary study of a novel scanning charge-pumping method using extra gates for SOI wafer inspection

T. Uchihashi, H. Yoshida, Y. Mashiko, 2002, IEEE Electron Device Letters.

Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

T. Uchihashi, H. Yoshida, S. Kishino, 2001 .

Characterization of deep levels in Si-MOS structure using ICTS measurement

Haruhiko Yoshida, Susumu Iwamoto, Seigô Kishino, 2000 .

Evaluation of Deep Levels in Si-MOS Structure using ICTS Measurement

Haruhiko Yoshida, Haruhiko Yoshida, Susumu Iwamoto, 1998 .

Isothermal capacitance transient spectroscopy of electron and hole emissions from interface states in metal-oxide-semiconductor transistors

Haruhiko Yoshida, Seigô Kishino, Hirohiko Niu, 1993 .

ICTS Measurement of Si-MOS Interface States

Haruhiko Yoshida, Haruhiko Yoshida, Seigô Kishino, 1992 .

Growth behavior of oxidation stacking faults and microdefects in silicon during high‐temperature annealing

S. Kishino, M. Tamura, S. Isomae, 1978 .

Enhanced Sensitivity of Anomalously Transmitted Intensity to Lattice Defects in Asymmetric Bragg-Case Diffraction of X-Rays

S. Kishino, 1974 .

Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth

T. Kajimura, K. Kurata, S. Kishino, 1974 .

Microscopic C-V measurements of SOI wafers by scanning capacitance microscopy

H. Yoshida, S. Kishino, T. Ishida, 2004 .

InP MIS Diode Improved by UV and Plasma Oxidation

H. Yoshida, S. Kishino, H. Niu, 1994 .

Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer

H. Yoshida, S. Kishino, R. Nakanishi, 2000 .