J. Kriz

High temperature stable metallization schemes for SiC-technology operating in air

T. Gessner, C. Kaufmann, K. Gottfried, 1998, 1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132).

Determination of ohmic contacts to n-type 6H- and polycrystalline 3C-SiC using circular transmission line structures

C. Kaufmann, K. Gottfried, J. Kriz, 1998 .

Qualification of extrinsics in BEOL - the new challenge

G. Antonin, S. Penka, A.H. Fischer, 2011, 2011 IEEE International Interconnect Technology Conference.

A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air

Thomas Gessner, C. Kaufmann, K. Gottfried, 1997 .