Tohru Oka

Small InGaP/GaAs heterojunction bipolar transistors with high-speed operation

Kiyoshi Ouchi, Tohru Oka, T. Nakamura, 1997 .

1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tsutomu Ina, Yukihisa Ueno, T. Oka, 2015 .

Novel self-aligned sub-micron emitter InP/InGaAs HBT's using T-shaped emitter electrode

Kazuhiko Hosomi, Tomonori Tanoue, Teruo Mozume, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

InP/InGaAs heterojunction bipolar transistor with extremely high f/spl tau/ over 200 GHz

Tomonori Tanoue, Teruo Mozume, Kiyoshi Ouchi, 1995 .

Recent development of vertical GaN power devices

T. Oka, Tohru Oka, 2019, Japanese Journal of Applied Physics.

High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits

Hiroyuki Uchiyama, Takafumi Taniguchi, Kazuhiro Mochizuki, 2001 .

Advanced Performance of Small-Scaled InGaP/GaAs HBT's withfT over 150 GHz andf,, over 250 GHz

Hiroyuki Uchiyama, T. Taniguchi, Kazuhiro Mochizuki, 1998 .

High speed InGaP/GaAs HBTs with fmax of 159 GHz

Kazuhiro Mochizuki, Kiyoshi Ouchi, Tohru Nakamura, 1997 .