Yuhao Zhang

发表

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Daniel Piedra, Xiang Gao, Ahmad Zubair, 2018, IEEE Electron Device Letters.

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Tomas Palacios, Tatsuya Fujishima, T. Palacios, 2013 .

720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

Nadim Chowdhury, Tomás Palacios, Mengyang Yuan, 2018, IEEE Electron Device Letters.

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping

Daniel Piedra, Ujwal Radhakrishna, Dimitri Antoniadis, 2013, 2013 IEEE International Electron Devices Meeting.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

Jing Kong, Anantha Chandrakasan, Ahmad Zubair, 2016, Nano letters.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Daniel Piedra, Tomás Palacios, Armin Dadgar, 2017, IEEE Electron Device Letters.

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Daniel Piedra, Tomas Palacios, Puneet Srivastava, 2015, IEEE Transactions on Electron Devices.