D McMorrow

Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts

A Zadeh, V Ferlet-Cavrois, O. Flament, 2009, IEEE Transactions on Nuclear Science.

A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal

M. Liu, S. Buchner, D. Mcmorrow, 2010, IEEE Transactions on Nuclear Science.

A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation

P Paillet, M R Shaneyfelt, N Fel, 2008, IEEE Transactions on Nuclear Science.

Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS

S P Buchner, J D Cressler, G Vizkelethy, 2010, IEEE Transactions on Nuclear Science.

3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing.

V. Pouget, D. Lewis, E. Faraud, 2011, Optics express.

Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

M R Shaneyfelt, V Ferlet-Cavrois, G Vizkelethy, 2011, IEEE Transactions on Nuclear Science.