Mu-Hui Park

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Byung-Gil Choi, Hye-Jin Kim, Chang-Soo Lee, 2008, IEEE Journal of Solid-State Circuits.

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Byung-Gil Choi, Hongsik Jeong, Chang-Soo Lee, 2007, IEEE Journal of Solid-State Circuits.

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Ki-Whan Song, Young-Hyun Jun, Jaewhan Kim, 2011, 2011 IEEE International Solid-State Circuits Conference.

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

Byung-Gil Choi, Chang-Soo Lee, Beak-Hyung Cho, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

Qi Wang, Jaewhan Kim, Jinyoung Kim, 2012, 2012 IEEE International Solid-State Circuits Conference.

Phase change memory device having word line drivers

Beak-Hyung Cho, Mu-Hui Park, Kwang-jin Hwaseong Lee, 2006 .

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Hye-Jin Kim, Chang-Hyun Kim, Byung-Gil Choi, 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.