Ch. Cardinaud

发表

Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of the residence time

Gilles Cartry, C. Cardinaud, G. Cartry, 2002 .

Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment

A. Scavennec, Y. Feurprier, C. Cardinaud, 1997 .

Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Angeliki Tserepi, Evangelos Gogolides, George P. Patsis, 2003 .

Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Gilles Cartry, C. Cardinaud, G. Cartry, 2005 .

Etching processes of tungsten in SF6‐O2 radio‐frequency plasmas

Ch. Cardinaud, M. C. Peignon, Guy Turban, 1991 .

New polymer materials for nanoimprinting

Hella-Christin Scheer, Babak Heidari, Karl Pfeiffer, 2000 .

SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

C. Cardinaud, G. Turban, Ch. Cardinaud, 2000 .

Investigation of Si and Ge etching mechanisms in radiofrequency CF2-O2 plasma based on surface reactivities

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

A. Barreau, Karl Pfeiffer, F. Gaboriau, 2000 .

Comparison of etching processes of silicon and germanium in SF6–O2 radio‐frequency plasma

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .

Novel linear and crosslinking polymers for nanoimprinting with high etch resistance

Gabi Gruetzner, Hella-Christin Scheer, M. Fink, 2000 .