A. Ajay

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

C. Bougerol, E. Monroy, C. Durand, 2014, 1602.07227.

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

K. Kheng, E. Monroy, P. Ruterana, 2016, 1610.07413.

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

C. Bougerol, E. Monroy, E. Monroy, 2015, 1504.04989.