J. P. Reithmaier

发表

First order gain and index coupled distributed feedback lasers in ZnSe‐based structures with finely tunable emission wavelengths

Detlef Hommel, Alfred Forchel, G. Landwehr, 1996 .

High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers

G. Eisenstein, C. Gilfert, D. Gready, 2012, IEEE Photonics Technology Letters.

First order gain‐coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Alfred Forchel, A. Forchel, J. Reithmaier, 1996 .

Height-driven linear polarization of the surface emission from quantum dashes

J. Andrzejewski, Sven Höfling, Alfred Forchel, 2012 .

First‐order gain‐coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth

Alfred Forchel, F. Faller, J. P. Reithmaier, 1995 .

High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers

J. Reithmaier, J. P. Reithmaier, V. Sichkovskyi, 2013 .

The role of Auger recombination in InAs 1.3-/spl mu/m quantum-dot lasers investigated using high hydrostatic pressure

A. Forchel, I. P. Marko, A. R. Adams, 2003 .

High resolution focussed ion beam implantation with post objective lens retarding and acceleration

Alfred Forchel, H. Sawaragi, A. Forchel, 1994 .

III-V integration on Si for photonics

M. Benyoucef, J. P. Reithmaier, 2016, 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).