Fenton R. McFeely

Oxygen removal from Si via reaction with adsorbed Ge

Bernard S. Meyerson, Franz J. Himpsel, U. O. Karlsson, 1987 .

Low Tinv (≤ 1.8 nm) Metal-Gated MOSFETs on SiO2 Based Gate Dielectrics for High Performance Logic Applications

Wilfried Haensch, Ernest Y. Wu, Ying Li, 2003 .

Synthetic Control of Solid/Solid Interfaces: Analysis of Three New Silicon/Silicon Oxide Interfaces by Soft X-ray Photoemission

F. Mcfeely, Fenton R. McFeely, Sunghee Lee, 1994 .

Fabrication of midgap metal gates compatible with ultrathin dielectrics

Douglas A. Buchanan, F. Mcfeely, D. Buchanan, 1998 .

Core‐level photoemission and the structure of the Si/SiO2 interface: A reappraisal

F. Mcfeely, Fenton R. McFeely, Sunghee Lee, 1994 .

Microscopic structure of the SiO 2 /Si interface

F. J. Himpsel, A. Taleb-Ibrahimi, F. Mcfeely, 1988 .

Interface studies of tungsten gate metal–oxide–silicon capacitors

Paul M. Solomon, Wen-Chin Lee, Eduard A. Cartier, 2001 .