A. Zeng

Electrooptic characterization of modulation-doped field-effect transistors with monolithically-integrated test fixtures

M. K. Jackson, M. V. Hove, W. Raedt, 1996 .

InP-based HEMT technology for MMIC applications

M. K. Jackson, M. V. Hove, D. Schreurs, 1995 .

On‐wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation‐doped field‐effect transistor with 4.2 ps switching time and 3.2 ps delay

M. K. Jackson, M. V. Hove, W. Raedt, 1995 .

Characterization of GaAs/Ga1−xAlxAs multilayer systems by infrared spectroscopy at normal incidence

C. Lavoie, T. Tiedje, A. Zeng, 1993 .