Guijuan Zhao

发表

Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy

Jianhong Yang, Wenge Yang, Guipeng Liu, 2021 .

Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2018 .

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018 .

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Scientific Reports.

Tuning the mechanical and electronic properties and carrier mobility of phosphorene via family atom doping: a first-principles study

Jianhong Yang, Guipeng Liu, Shu’an Xing, 2020 .

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Competitive growth mechanisms of AlN on Si (111) by MOVPE

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2014, Scientific Reports.

Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Measurement of iron characteristics under ramp compression

A. Ravasio, G. Morard, E. Brambrink, 2017 .

Investigation of band alignment at two-dimensional ReS2/XSe2 (X=W, Mo) heterojunctions using x-ray/ultraviolet photoelectron spectroscopy

Jianhong Yang, Wenge Yang, Guipeng Liu, 2022, Physics Letters A.

Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy

Jianhong Yang, Wenge Yang, Guipeng Liu, 2020 .

Dislocation Scattering in ZnMgO/ZnO Heterostructures

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2013, IEEE Transactions on Electron Devices.

Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

Hongyuan Wei, Z. Wang, Qinsheng Zhu, 2014 .

Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy

Jianhong Yang, Wenge Yang, Guipeng Liu, 2021 .

The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN

Jianhong Yang, Wenge Yang, Guipeng Liu, 2022, Applied Surface Science.

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Hongyuan Wei, Z. Wang, Qinsheng Zhu, 2013 .

Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures

Y. Hao, Ju Wu, Qinsheng Zhu, 2012 .

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Guipeng Liu, Shu’an Xing, Guijuan Zhao, 2022, Applied Physics Letters.

Theoretical Study on InAlAs/InGaAs Single‐Photon Avalanche Detectors with Self‐Feedback

Jianhong Yang, Guipeng Liu, Guijuan Zhao, 2020, physica status solidi (a).

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015, Nanoscale.

Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

Hongyuan Wei, Guijuan Zhao, Shao-yan Yang, 2014 .

(Ca,Na)(Zn,Mn)2As2: A new spin and charge doping decoupled diluted ferromagnetic semiconductor

Lei Liu, J. Zhu, G. Luke, 2014 .

Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

Xiaoqing Xu, Hongyuan Wei, Qinsheng Zhu, 2012 .

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Nanoscale Research Letters.

Red Emission of InGaN/GaN Multiple‐Quantum‐Well Light‐Emitting Diode Structures with Indium‐Rich Clusters

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018, physica status solidi (a).

Significant deterioration of energy products in exchange-coupled composite magnets

J. Ding, Huaiwu Zhang, Haitao Yang, 2012 .

Dipole-regulated bandgap and high electron mobility for bilayer Janus MoSiGeN4

Jianhong Yang, Guipeng Liu, Guijuan Zhao, 2022, Applied Physics Letters.

Properties of monolayer black phosphorus affected by uniaxial strain

Jianhong Yang, Yonghui Tian, Jie Wang, 2020 .

Growth and Characterization of an a-Plane InxGa1−xN on a r-Plane Sapphire

Hongyuan Wei, Qinsheng Zhu, Guijuan Zhao, 2012 .

Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2017, Scientific Reports.

The immiscibility of InAlN ternary alloy

Xiaoqing Xu, Hongyuan Wei, Lianshan Wang, 2016, Scientific Reports.

Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells

Ju Wu, Qinsheng Zhu, Guijuan Zhao, 2012 .

Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs

Jianhong Yang, Guipeng Liu, Salamat Ali, 2021 .

Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation*

Jian-hong Yang, Guipeng Liu, Guijuan Zhao, 2021, Chinese Physics B.

Strain modulation of electronic and optical properties of monolayer MoSi2N4

Jianhong Yang, Guipeng Liu, Guijuan Zhao, 2022, Physica E: Low-dimensional Systems and Nanostructures.

Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE*

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016 .

Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2019, Materials Research Express.

Scattering due to large cluster embedded in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2016, Nanomaterials.