S. P. Doran

Photolithography at 0.10 and 0.13 μm using ArF excimer laser lithography in combination with resolution enhancement techniques

R. Kunz, M. Rothschild, M. Chan, 1997 .

Evaluation of depth‐of‐focus in photolithography at 193 and 248 nm for feature sizes of 0.25 μm and below

Steven A. Orszag, Eytan Barouch, Uwe Hollerbach, 1993 .

Infrared frequency selective surfaces fabricated using optical lithography and phase-shift masks

T. Lyszczarz, S. Spector, D. Astolfi, 2001 .

Polymer photochemistry at advanced optical wavelengths

Roderick R. Kunz, Roger F. Sinta, Theodore H. Fedynyshyn, 2000 .

Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuits

D. Ehrlich, M. Rothschild, S. P. Doran, 1987 .

Prospects for using existing resists for evaluating 157-nm imaging systems

Roderick R. Kunz, Theodore H. Fedynyshyn, Jane E. Curtin, 2000, Advanced Lithography.

High-resolution fluorocarbon-based resist for 157-nm lithography

Roderick R. Kunz, Roger F. Sinta, Michael Sworin, 2001, SPIE Advanced Lithography.