J. Rip

发表

Methodology for measuring trace metal surface contamination on PV silicon substrates

K. Wostyn, S. Gendt, P. Mertens, 2012 .

Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments

S. De Gendt, J. Rip, S. De Gendt, 2005, IEEE Transactions on Device and Materials Reliability.

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Laura Nyns, Herbert Struyf, Guy Brammertz, 2011 .

Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants

H. Philipsen, F. Holsteyns, A. Pacco, 2019, Nanoscale Research Letters.

Saturation effects in TXRF on micro-droplet residue samples

S. Gendt, C. Vinckier, W. Fyen, 2004 .

Epitaxy solutions for Ge MOS technology

O. Richard, H. Bender, R. Loo, 2006 .

Chemical Vapor Deposition of Azidoalkylsilane Monolayer Films.

T. Conard, R. Vos, T. Stakenborg, 2018, Langmuir : the ACS journal of surfaces and colloids.

(Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture

Naoto Horiguchi, Liesbeth Witters, Aaron Thean, 2015 .

Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions

U. Mirsaidov, F. Holsteyns, A. Pacco, 2018, Solid State Phenomena.

Etching of III-V Materials Determined by ICP-MS with Sub-Nanometer Precision

S. Gendt, D. H. V. Dorp, F. Holsteyns, 2014 .

Nanoscale Etching of In0.53Ga0.47As in H2O2/HCl Solutions for

S. Gendt, J. Kelly, D. H. V. Dorp, 2014 .

Mask absorber development to enable next-generation EUVL

Vicky Philipsen, Eric Hendrickx, Andreas Erdmann, 2019, Photomask Japan.

Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers

S. Gendt, C. Vinckier, P. Mertens, 2004 .

Metals in the active site of native protein phosphatase-1.

M. Bollen, S. De Gendt, M. Beullens, 2015, Journal of inorganic biochemistry.

Biocompatibility assessment of advanced wafer-level based chip encapsulation

Maaike Op de Beeck, Rita Vos, Eric Dy, 2010, 3rd Electronics System Integration Technology Conference ESTC.

Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge

R. Loo, P. Ong, P. Storck, 2011 .

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Geoffrey Pourtois, Matthias Mueller, Burkhard Beckhoff, 2012 .

Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium

Geoffrey Pourtois, Matty Caymax, Annelies Delabie, 2011 .

Vapor phase decomposition-droplet collection-total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

S. Gendt, C. Vinckier, I. Teerlinck, 2005 .

Remediation for TXRF saturation effects on microdroplet residues from preconcentration methods on semiconductor wafers

T. Conard, S. Gendt, C. Vinckier, 2005 .

Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Farid Sebaai, L. Witters, Kurt Wostyn, 2016 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

B. Douhard, T. Verbiest, R. Loo, 2011 .

Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers

R. Loo, P. Ong, L. Souriau, 2012 .

50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection

M. Heyns, D. Barge, G. Hellings, 2020, International Electron Devices Meeting.

Cesium retention during sputtering with low energy Cs+ and oxygen flooding

J. Rip, W. Vandervorst, B. Berghmans, 2011 .