M. Grégoire

发表

Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

F. Nemouchi, D. Mangelinck, P. Gergaud, 2014 .

Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology

Q. Rafhay, P. Rodriguez, P. Gergaud, 2021 .

Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform

F. Nemouchi, Q. Rafhay, C. Jany, 2020, IEEE Transactions on Electron Devices.

Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature

S. Kerdilès, D. Mangelinck, P. Benigni, 2020, Journal of Applied Physics.

Millisecond annealing for salicide formation: Challenges of NiSi agglomeration free process

R. Beneyton, P. Morin, M. Grégoire, 2011, 2011 IEEE International Interconnect Technology Conference.

Thermomechanical Behavior and Properties of Passivated Pvd and Ecd Cu Thin Films

S. Kordic, O. Thomas, P. Gergaud, 2005 .

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

H. Grampeix, E. Dubois, M. Vinet, 2016, 2016 16th International Workshop on Junction Technology (IWJT).

Multimodal Analysis of Stress Induced Degradation of 90nm Node Interconnects

X. Federspiel, M. Grégoire, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Electromigration in narrow and large damascene copper lines

M. Grégoire, F. Terrier, V. Girault, 2004, IEEE International Integrated Reliability Workshop Final Report, 2004.

Atomic scale investigation of arsenic segregation in high-k metal gate stacks

V. Delaye, D. Blavette, A. Grenier, 2016 .

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

E. Dubois, M. Vinet, L. Hutin, 2016 .

Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide

S. Joblot, A. Papon, D. Mangelinck, 2021, Microelectronic Engineering.

Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Q. Rafhay, C. Jany, P. Gergaud, 2023, Materials Science in Semiconductor Processing.

Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis

D. Mangelinck, F. Lorut, M. Juhel, 2013 .

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

R. Pantel, M. Descoins, D. Mangelinck, 2014 .

Pt redistribution in N-MOS transistors during Ni salicide process

D. Mangelinck, M. Juhel, M. Grégoire, 2013 .

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

D. Mangelinck, S. Baudot, M. Juhel, 2012 .

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

D. Mangelinck, M. Juhel, M. Grégoire, 2011 .

Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

P. Chevalier, L. Clément, D. Blavette, 2017 .

3D Atomic Scale Analysis of CMOS type structures for 14 nm UTBB-SOI technology

D. Blavette, A. Grenier, T. Printemps, 2015, Microscopy and Microanalysis.

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

X. Federspiel, S. Courtas, C. Wyon, 2006, Microelectron. Reliab..

Additional Siconi™ pre-clean for reliable TiSix contacts in advanced imager technologies

D. Roy, M. Grégoire, K. Dabertrand, 2019, Micro and Nano Engineering.

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration

Maud Vinet, Mikaël Casse, Laurent Brunet, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part II

Maud Vinet, Emmanuel Dubois, Sebastien Martinie, 2016, IEEE Transactions on Electron Devices.

Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part I

E. Dubois, O. Rozeau, M. Vinet, 2016, IEEE Transactions on Electron Devices.

Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

F. Nemouchi, D. Mangelinck, P. Rodriguez, 2018, Microelectronic Engineering.

Redistribution of phosphorus during Ni 0.9 Pt 0.1 -based silicide formation on phosphorus implanted Si substrates

F. Nemouchi, D. Mangelinck, P. Rodriguez, 2018 .

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

D. Mangelinck, M. Texier, M. Juhel, 2014 .

Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours

Pierre Morin, A. Pofelski, Shankar Muthukrishnan, 2014 .

28nm FDSOI CMOS technology (FEOL and BEOL) thermal stability for 3D Sequential Integration: yield and reliability analysis

X. Garros, O. Rozeau, G. Ghibaudo, 2020, 2020 IEEE Symposium on VLSI Technology.

Nickel silicide encroachment formation and characterization

R. Pantel, R. Beneyton, B. Imbert, 2010 .

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

P. Chevalier, F. Deprat, I. Berbezier, 2023, Solid-State Electronics.

Improved electrical and reliability performance of 65nm interconnects with new barrier integration schemes

X. Federspiel, M. Grégoire, R. Bouyssou, 2006 .

Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias

Marc Juhel, P. Vannier, M. Gregoire, 2008 .

New stress voiding observations in Cu interconnects

X. Federspiel, S. Courtas, P. Vannier, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

14nm FDSOI technology for high speed and energy efficient applications

J. Mazurier, O. Faynot, A. Pofelski, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

P. Chausse, D. Delille, B. Gautier, 2005 .