D. Kwak

Highly manufacturable 90 nm DRAM technology

S.H. Hong, C.H. Cho, D.J. Lee, 2002, Digest. International Electron Devices Meeting,.

Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design Rule

Kinam Kim, Ju-Yong Lee, Min-Sang Kim, 2002 .

Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime

L. Pantisano, R. Degraeve, A. Paccagnella, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAs

C. Q. Lee, Hee-Chul Lee, Jae-Eun Kim, 1995 .

Smallest Bit-Line Contact of 76nm pitch on NAND Flash Cell by using Reversal PR (Photo Resist) and SADP (Self-Align Double Patterning) Process

Sunghyun Kwon, Won-Seong Lee, Byungjoon Hwang, 2007, 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

Iridium Thin Film as a Bottom Electrode for High Dielectric (Ba,Sr)TiO3 Capacitors

Hee-Chul Lee, C. Shin, S. Cha, 1997 .

A simple method for high-frequency characterization of (Ba,Sr)TiO3 thin film capacitors

Hee-Chul Lee, D. Kwak, S. Cha, 1998 .

Determination of conduction band tail and Fermi energy of heavily Si‐doped GaAs by room‐temperature photoluminescence

Hee-Chul Lee, Jae-Eun Kim, H. Park, 1995 .

Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack

R. Degraeve, F. Crupi, G. Groeseneken, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Concentration dependent electron distributions in heavily Si-doped GaAs

Jae-Eun Kim, H. Park, D. Kwak, 1996 .