A. Mallikarjunan

发表

Designing high performance precursors for atomic layer deposition of silicon oxide

R. Pearlstein, B. Han, A. Derecskei-Kovacs, 2015 .

Correlation Between Bond Cleavage in Parylene N and the Degradation of Its Dielectric Properties

T. Lu, J. Senkevich, A. Mallikarjunan, 2004 .

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

W. Kessels, H. Knoops, T. Faraz, 2017, ACS applied materials & interfaces.

Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

P. Rice, Ho-Cheol Kim, M. Toney, 2003 .

Silicon precursor development for advanced dielectric barriers for VLSI technology

A. D. Johnson, R. Vrtis, A. Derecskei-Kovacs, 2012 .

Atomic Layer Deposition of Silicon Dioxide Using Aminosilanes Di-sec-butylaminosilane and Bis(tert-butylamino)silane with Ozone

Y. Chabal, R. Pearlstein, L. F. Peña, 2016 .

Understanding the Impact of Porosity and Pore Structure in Ultra Low Dielectric Constant Organosilicate Glasses

Irene J. Hsu, R. Vrtis, A. Mallikarjunan, 2012 .

Metal drift behavior in low dielectric constant organosiloxane polymer

S. Murarka, T. Lu, A. Mallikarjunan, 2001 .

Hindered Copper Ion Penetration in Parylene-N Films

T. Lu, J. Senkevich, G-R. Yang, 2003 .

Plasma surface modification for ion penetration barrier in organosiloxane polymer

S. Murarka, T. Lu, G-R. Yang, 2002 .

Mobile Ion Detection in Organosiloxane Polymer Using Triangular Voltage Sweep

S. Murarka, T. Lu, A. Mallikarjunan, 2002 .

The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films

S. Murarka, T. Lu, G-R. Yang, 2002 .

Electrical Behavior of Cu Thin Fluorinated PECVD Oxide MIS Capacitors

S. Murarka, H. Bakhru, C. Steinbrüchel, 2000 .

Molecular Caulking: A Pore Sealing CVD Polymer for Ultralow k Dielectrics

W. Lanford, Gwo-Ching Wang, T. Lu, 2004 .

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

R. Geer, E. Lifshin, T. Lu, 2002 .

Mechanical Enhancement Of Nanoporous Low-K Films As Interlayer Dielectrics By Ion Implantation

T. Lu, H. Bakhru, A. Mallikarjunan, 2002 .

Resistivity of Copper Films at Thicknesses Near the Mean Free Path of Electrons in Copper Minimization of the Diffuse Scattering in Copper

S. Murarka, A. Mallikarjunan, S. Sharma, 1999 .

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Ying Li, Anita Madan, Oleg Gluschenkov, 2008 .

Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep

S. Murarka, T. Lu, A. Mallikarjunan, 2004 .

Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride

Y. Chabal, R. Pearlstein, J. Cure, 2017 .

Supercritical CO_2 extraction of porogen phase: An alternative route to nanoporous dielectrics

M. Toney, J. Lubguban, T. Rajagopalan, 2004 .

β-phase tungsten nanorod formation by oblique-angle sputter deposition

T. Karabacak, Gwo-Ching Wang, T. Lu, 2003 .

Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

G. Burbach, D. Greenlaw, S.F. Huang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress

E. J. Rymaszewski, T. Lu, A. Mallikarjunan, 2006 .

Mechanistic Understanding of Low κ Organosilicate Glass Film Planarization

A. Mallikarjunan, M. O'neill, R. Ridgeway, 2019, ECS Journal of Solid State Science and Technology.