J. Om

Impact of rapid thermal annealing on data retention time for 256 Mb and 1 Gb DRAM technology

Y.T. Kim, H.S. Kim, S.K. Park, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Modeling of $V_{\rm th}$ Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

Sang-Goo Jung, Jong-Ho Lee, Seung-Woo Shin, 2008, IEEE Transactions on Electron Devices.

Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory

H. Lee, Ga-Won Lee, Seaung-Suk Lee, 2009 .

Electrostatic force microscopy study about the hole trap in thin nitride/oxide/semiconductor structure

Hyunho Noh, Jong-Hun Kim, Z. Khim, 2008 .

The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate

Dongchan Kim, Sangcheol Kim, Byunghak Lee, 1999, ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).

The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology

Sangcheol Kim, Byunghak Lee, J. Om, 2000 .

Source/drain junction leakage current of LDD NMOSFET with various spacer materials

J. Om, M. Jo, Hyo-Sik Park, 1995, Proceedings International Conference on Microelectronic Test Structures.