J. Suh

Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Heung-Jae Cho, K. Lim, Yong Soo Kim, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

A novel method for forming gate spacer and its effects on the W/WN/sub x//poly-Si gate stack

Heung-Jae Cho, K. Lim, Yong Soo Kim, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).