Tae-Kyung Oh

RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor

Hyungcheol Shin, Sung-Joo Hong, Seon-Yong Cha, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

Sungjoo Hong, Seong-Wan Ryu, T. Jang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).