Taeyoung Chung

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Gwan-Hyeob Koh, Dae-Won Ha, Kinam Kim, 1999 .

Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design Rule

Kinam Kim, Ju-Yong Lee, Min-Sang Kim, 2002 .

Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 ㎚ DRAM

J. W. Lee, Kinam Kim, Sungsam Lee, 2003 .

A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 /spl mu/m technology node and beyond

Gwan-Hyeob Koh, Dae-Won Ha, Kinam Kim, 2000 .