K. Hamada

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

K. Ohyu, Takahide Umeda, K. Hamada, 2006 .

Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams

A. Uedono, T. Ohdaira, R. Suzuki, 1997 .

Defects related to DRAM leakage current studied by electrically detected magnetic resonance

T. Umeda, K. Okonogi, Y. Mochizuki, 2001 .

Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits

T. Umeda, K. Okonogi, Y. Mochizuki, 2003 .