Hiroake Niimi

发表

Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces

R. Fair, G. Lucovsky, Hong Yang, 1999 .

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor–dielectric interfaces and (ii) internal interfaces in stacked dielectrics

J. C. Phillips, M. Thorpe, G. Lucovsky, 2000 .

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

G. Lucovsky, Hong Yang, Y. Wu, 2000 .

Comparison of ultrathin SiO2∕Si(100) and SiO2∕Si(111) interfaces from soft x-ray photoelectron spectroscopy

M. D. Ulrich, J. E. Rowe, Gerald Lucovsky, 2006 .

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

J. E. Rowe, Gerald Lucovsky, Theodore E. Madey, 1999 .

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

G. Lucovsky, L. Brillson, Hiroake Niimi, 1998 .

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

J. E. Rowe, Gerald Lucovsky, Theodore E. Madey, 1999 .

Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Gerald Lucovsky, G. Lucovsky, Y. Wu, 2000 .

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

J. Wortman, J. Hauser, V. Misra, 1999 .

Ultrathin Silicon Oxide and Nitride – Silicon Interface States

G. Lucovsky, L. Brillson, Hiroake Niimi, 1999 .

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

J. C. Phillips, V. Misra, G. Lucovsky, 1999 .

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Veena Misra, J. C. Phillips, Gerald Lucovsky, 1999 .

Cathodoluminescence spectroscopy of nitrided SiO2–Si interfaces

G. Lucovsky, Hiroake Niimi, A. Young, 1999 .

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

G. Lucovsky, B. D. White, L. Brillson, 2000 .

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces

G. Lucovsky, G. Jessen, L. Brillson, 1998 .

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

J. C. Phillips, M. Thorpe, G. Lucovsky, 2000 .