D. Lin

发表

Advantages of LDD-only implanted fluorine with submicron CMOS technologies

H. Mogul, T. Rost, D. Lin, 1997 .

The impact of fluorine on CMOS channel length and shallow junction formation

T. Rost, D. Lin, 1993, Proceedings of IEEE International Electron Devices Meeting.

The effect of fluorine on MOSFET channel length

T. Rost, A. Tsao, D. Lin, 1993, IEEE Electron Device Letters.

Identification of oxygen‐related midgap level in GaAs

H. Gatos, J. Lagowski, D. Lin, 1984 .

Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

M. Skowronski, H. Gatos, J. Lagowski, 1986 .

Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAs

M. Kamińska, H. Gatos, J. Lagowski, 1984 .

Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

M. Skowronski, H. Gatos, J. Lagowski, 1985 .

Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

H. Gatos, J. Lagowski, D. Lin, 1984 .

Response to Comment on Identification of oxygen-related midgap level in GaAs [Appl. Phys. Let

H. Gatos, J. Lagowski, D. Lin, 1985 .

A novel LDMOS structure with a step gate oxide

Der-Gao Lin, S. L. Tu, Yee-Chaung See, 1995, Proceedings of International Electron Devices Meeting.