Y. Fang

发表

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells.

C. Chen, S. Wang, J. Dai, 2014, Optics express.

Simulation of the high temperature performance of InGaN multiple quantum well solar cells

D. Vasileska, S. Goodnick, D. Ding, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Performance enhancement of perovskite solar cells by doping TiO2 blocking layer with group VB elements

J. Yuan, Lei Zhu, Ya-bo Zhu, 2017 .

Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes

Y. Fang, Ling Chen, Yuqi Liu, 2022, Micromachines.

Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

S. L. Li, C. Chen, Y. Tian, 2013 .

Growth and properties of ZnO film grown on AlN buffer layer by PLD

C. Chen, J. Dai, H. Xiong, 2012 .

Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition

C. Chen, C. -. Yu, Y. Tian, 2011 .

Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition

S. L. Li, C. Chen, C. -. Yu, 2012 .

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

V. D'costa, A. Chizmeshya, J. Tolle, 2006 .

Chemical routes to Ge /Si(100) structures for low temperature Si-based semiconductor applications

M. Wistey, A. Chizmeshya, J. Tolle, 2007 .

Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating.

J Zhang, C. Chen, Y. Tian, 2015, Optics express.

Thermal expansivity of Ge1-y sny alloys

A. Chizmeshya, J. Kouvetakis, J. Menéndez, 2010 .

The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang, C. Q. Chen, H. Xiong, 2011, Other Conferences.

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

C. Poweleit, J. Tolle, J. Kouvetakis, 2008 .