M. D. Kersauson

发表

Recent advances in germanium emission [Invited]

Grégoire Beaudoin, I. Sagnes, Philippe Boucaud, 2013 .

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2013 .

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Yuji Yamamoto, Philippe Boucaud, Christian Wenger, 2013 .

Tensile-strained germanium microdisks

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2013 .

Control of tensile strain in germanium waveguides through silicon nitride layers

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2012 .

Control of direct band gap emission of bulk germanium by mechanical tensile strain

E. Martincic, Philippe Boucaud, Guy Fishman, 2010 .

Direct and indirect band gap room temperature electroluminescence of Ge diodes

I. Sagnes, N. Zerounian, R. Jakomin, 2010 .

High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2011 .

Optical gain in single tensile-strained germanium photonic wire.

R. Jakomin, M. E. Kurdi, S. Sauvage, 2011, Optics express.