P. Kuschnerus

发表

Actinic aerial image measurement for qualification of defect on 157-nm photomask

Wolfgang Degel, Iwao Higashikawa, Axel M. Zibold, 2004, Photomask Japan.

High-precision determination of atomic positions in 4H– and 6H–SiC crystals

F. Bechstedt, J. Kräusslich, P. Kuschnerus, 1999 .

HYDROGEN-CHARGING OF NB/FE MULTILAYERS

F. Klose, A. Weidinger, D. Nagengast, 1995 .

High-precision determination of atomic positions in crystals: The case of 6 H - and 4 H -SiC

Friedhelm Bechstedt, Jürgen Furthmüller, K. Goetz, 1998 .

Electron-beam-based photomask repair

Hans W. P. Koops, Petra Spies, Klaus Edinger, 2004 .

Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

Frank Scholze, Gerhard Ulm, Mathias Richter, 2000 .

PtSi–n–Si Schottky‐barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range

H. Melchior, Gerhard Ulm, Mathias Richter, 1996 .

The PTB high-accuracy spectral responsivity scale in the ultraviolet

U. Kroth, M. Richter, H. Rabus, 2000 .

Characterization of photodiodes as transfer detector standards in the 120 nm to 600 nm spectral range

Frank Scholze, Gerhard Ulm, Mathias Richter, 1998 .

High-accuracy detector calibration in the 3-1500 eV spectral range at the PTB radiometry laboratory.

F. Scholze, M. Richter, H. Rabus, 1998, Journal of synchrotron radiation.